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Hasnain, G., Döhler, G. H., Whinnery, J. R., Miller, J. N., Dienes, A. (1986) Highly tunable and efficient room‐temperature electroluminescence from GaAs doping superlattices. Applied Physics Letters, 49 (20). 1357-1359 doi:10.1063/1.97323

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Reference TypeJournal (article/letter/editorial)
TitleHighly tunable and efficient room‐temperature electroluminescence from GaAs doping superlattices
JournalApplied Physics Letters
AuthorsHasnain, G.Author
Döhler, G. H.Author
Whinnery, J. R.Author
Miller, J. N.Author
Dienes, A.Author
Year1986 (November 17)Volume49
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97323Search in ResearchGate
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Mindat Ref. ID8478811Long-form Identifiermindat:1:5:8478811:1
GUID0
Full ReferenceHasnain, G., Döhler, G. H., Whinnery, J. R., Miller, J. N., Dienes, A. (1986) Highly tunable and efficient room‐temperature electroluminescence from GaAs doping superlattices. Applied Physics Letters, 49 (20). 1357-1359 doi:10.1063/1.97323
Plain TextHasnain, G., Döhler, G. H., Whinnery, J. R., Miller, J. N., Dienes, A. (1986) Highly tunable and efficient room‐temperature electroluminescence from GaAs doping superlattices. Applied Physics Letters, 49 (20). 1357-1359 doi:10.1063/1.97323
In(1986, November) Applied Physics Letters Vol. 49 (20) AIP Publishing

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Chang‐Hasnain, C. J., Hasnain, G., Johnson, N. M., Dohler, G. H., Miller, J. N., Whinnery, J. R., Dienes, A. (1987) Tunable electroabsorption in gallium arsenide doping superlattices. Applied Physics Letters, 50 (14). 915-917 doi:10.1063/1.98031
Künzel, H., Döhler, G. H., Ruden, P., Ploog, K. (1982) Tunable electroluminescence from GaAs doping superlattices. Applied Physics Letters, 41 (9). 852-854 doi:10.1063/1.93717
Hasnain, G., Chang‐Hasnain, C., Dienes, A., Whinnery, J. R. (1988) Characteristics of a monolithically integrated doping superlattice optical circuit. Applied Physics Letters, 52 (21). 1765-1767 doi:10.1063/1.99636
Hasnain, G., Mars, D., Döhler, G. H., Ogura, M., Smith, J. S. (1987) Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built‐in shadow mask. Applied Physics Letters, 51 (11). 831-833 doi:10.1063/1.98827
Döhler, G. H., Hasnain, G., Miller, J. N. (1986) Insitugrown‐in selective contacts ton‐i‐p‐idoping superlattice crystals using molecular beam epitaxial growth through a shadow mask. Applied Physics Letters, 49 (12). 704-706 doi:10.1063/1.97573
Chang‐Hasnain, C., Welch, D. F., Scifres, D. R., Whinnery, J. R., Dienes, A., Burnham, R. D. (1986) Diffraction‐limited emission from a diode laser array in an apertured graded‐index lens external cavity. Applied Physics Letters, 49 (11). 614-616 doi:10.1063/1.97613
Jung, H., Döhler, G. H., Göbel, E. O., Ploog, K. (1983) Optical gain in GaAs doping superlattices. Applied Physics Letters, 43 (1). 40-42 doi:10.1063/1.94161
Döhler, G. H., Künzel, H., Ploog, K. (1982) Tunable absorption coefficient in GaAs doping superlattices. Physical Review B, 25 (4) 2616-2626 doi:10.1103/physrevb.25.2616
Chang‐Hasnain, C. J., Dienes, A., Whinnery, J. R., Streifer, W., Scifres, D. R. (1989) Characteristics of the off‐centered apertured mirror external cavity laser array. Applied Physics Letters, 54 (6). 484-486 doi:10.1063/1.100956
Ploog, K., Jung, H., Künzel, H., Ruden, P. (1983) Tunable Photo- and Electroluminescence from GaAs Doping Superlattices. Japanese Journal of Applied Physics, 22. 287 doi:10.7567/jjaps.22s1.287
Chang‐Hasnain, C. J., Berger, J., Scifres, D. R., Streifer, W., Whinnery, J. R., Dienes, A. (1987) High power with high efficiency in a narrow single‐lobed beam from a diode laser array in an external cavity. Applied Physics Letters, 50 (21). 1465-1467 doi:10.1063/1.97801
 
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