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Nagle, J., Hersee, S., Krakowski, M., Weil, T., Weisbuch, C. (1986) Threshold current of single quantum well lasers: The role of the confining layers. Applied Physics Letters, 49 (20). 1325-1327 doi:10.1063/1.97366

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Reference TypeJournal (article/letter/editorial)
TitleThreshold current of single quantum well lasers: The role of the confining layers
JournalApplied Physics Letters
AuthorsNagle, J.Author
Hersee, S.Author
Krakowski, M.Author
Weil, T.Author
Weisbuch, C.Author
Year1986 (November 17)Volume49
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97366Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8478840Long-form Identifiermindat:1:5:8478840:3
GUID0
Full ReferenceNagle, J., Hersee, S., Krakowski, M., Weil, T., Weisbuch, C. (1986) Threshold current of single quantum well lasers: The role of the confining layers. Applied Physics Letters, 49 (20). 1325-1327 doi:10.1063/1.97366
Plain TextNagle, J., Hersee, S., Krakowski, M., Weil, T., Weisbuch, C. (1986) Threshold current of single quantum well lasers: The role of the confining layers. Applied Physics Letters, 49 (20). 1325-1327 doi:10.1063/1.97366
In(1986, November) Applied Physics Letters Vol. 49 (20) AIP Publishing

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Nagle, J., Hersee, S., Razeghi, M., Krakowski, M., De Cremoux, B., Weisbuch, C. (1986) Properties of 2D quantum well lasers. Surface Science Letters, 174 (1). doi:10.1016/0167-2584(86)90027-7
Nagle, J., Hersee, S., Razeghi, M., Krakowski, M., de Cremoux, B., Weisbuch, C. (1986) Properties of 2D quantum well lasers. Surface Science, 174 (1). 148-154 doi:10.1016/0039-6028(86)90400-0
Hayakawa, T., Suyama, T., Takahashi, K., Kondo, M., Yamamoto, S., Hijikata, T. (1986) Low current threshold AlGaAs visible laser diodes with an (AlGaAs)m(GaAs)nsuperlattice quantum well. Applied Physics Letters, 49 (11). 636-638 doi:10.1063/1.97064
Tsang, W. T., Weisbuch, C., Miller, R. C., Dingle, R. (1979) Current injection GaAs‐AlxGa1−xAs multi‐quantum‐well heterostructure lasers prepared by molecular beam epitaxy. Applied Physics Letters, 35 (9). 673-675 doi:10.1063/1.91241
Schulman, J. N. (1986) Resonant injection quantum well lasers. Applied Physics Letters, 49 (12). 690-692 doi:10.1063/1.97569
Zory, P. S., Reisinger, A. R., Waters, R. G., Mawst, L. J., Zmudzinski, C. A., Emanuel, M. A., Givens, M. E., Coleman, J. J. (1986) Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers. Applied Physics Letters, 49 (1). 16-18 doi:10.1063/1.97086
Hohimer, J. P., Craft, D. C., Vawter, G. A. (1993) Effect of theY‐junction output coupler on the lasing threshold of semiconductor ring lasers. Applied Physics Letters, 63 (10). 1325-1327 doi:10.1063/1.109719
Shieh, C., Engelmann, R., Mantz, J., Alavi, K., Shu, C. (1989) Cavity length dependence of threshold current for quantum well lasers. Applied Physics Letters, 54 (12). 1089-1091 doi:10.1063/1.100766
Chow, W. W., Amano, H., Takeuchi, T., Han, J. (1999) Quantum-well width dependence of threshold current density in InGaN lasers. Applied Physics Letters, 75 (2). 244-246 doi:10.1063/1.124336
Choi, H. K., Wang, C. A. (1990) InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency. Applied Physics Letters, 57 (4). 321-323 doi:10.1063/1.103678
Givens, M. E., Miller, L. M., Coleman, J. J. (1992) Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers. Journal of Applied Physics, 71 (9). 4583-4588 doi:10.1063/1.350757
 
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