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Guido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096

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Reference TypeJournal (article/letter/editorial)
TitleIndex‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource
JournalApplied Physics Letters
AuthorsGuido, L. J.Author
Jackson, G. S.Author
Plano, W. E.Author
Hsieh, K. C.Author
Holonyak, N.Author
Burnham, R. D.Author
Epler, J. E.Author
Thornton, R. L.Author
Paoli, T. L.Author
Year1987 (March 9)Volume50
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.98096Search in ResearchGate
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Mindat Ref. ID8479504Long-form Identifiermindat:1:5:8479504:1
GUID0
Full ReferenceGuido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096
Plain TextGuido, L. J., Jackson, G. S., Plano, W. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Epler, J. E., Thornton, R. L., Paoli, T. L. (1987) Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−ysource. Applied Physics Letters, 50 (10). 609-611 doi:10.1063/1.98096
In(1987, March) Applied Physics Letters Vol. 50 (10) AIP Publishing

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Guido, L. J., Plano, W. E., Jackson, G. S., Holonyak, N., Burnham, R. D., Epler, J. E. (1987) Coupled‐stripe AlxGa1−xAs‐GaAs quantum well lasers defined by vacancy‐enhanced impurity‐induced layer disordering from (Si2)y(GaAs)1−ybarriers. Applied Physics Letters, 50 (12). 757-759 doi:10.1063/1.98036
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Impurity‐induced layer‐disordered buried heterostructure AlxGa1−xAs‐GaAs quantum well edge‐injection laser array. Applied Physics Letters, 50 (7). 392-394 doi:10.1063/1.98209
Burnham, R. D., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Nam, D. W., Thornton, R. L., Paoli, T. L. (1986) Quantum well AlxGa1−xAs‐GaAs lasers with internal (Si2)x(GaAs)1−xbarriers. Applied Physics Letters, 48 (12). 800-802 doi:10.1063/1.96674
Deppe, D. G., Jackson, G. S., Holonyak, N., Burnham, R. D., Thornton, R. L. (1987) Coupled stripe AlxGa1−xAs‐GaAs quantum well lasers defined by impurity‐induced (Si) layer disordering. Applied Physics Letters, 50 (11). 632-634 doi:10.1063/1.98103
Deppe, D. G., Guido, L. J., Holonyak, N., Hsieh, K. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion. Applied Physics Letters, 49 (9). 510-512 doi:10.1063/1.97133
Guido, L. J., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Plano, W. E., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1987) Effects of dielectric encapsulation and As overpressure on Al‐Ga interdiffusion in AlxGa1−xAs‐GaAs quantum‐well heterostructures. Journal of Applied Physics, 61 (4). 1372-1379 doi:10.1063/1.338116
Jackson, G. S., Deppe, D. G., Hsieh, K. C., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Reduced temperature sensitivity AlxGa1−xAs‐GaAs quantum well lasers with (Si2)x(GaAs)1−x‘‘barriers’’. Applied Physics Letters, 48 (17). 1156-1158 doi:10.1063/1.96455
Jackson, G. S., Holonyak, N., Hall, D. C., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Supermode behavior of coupled two‐stripe AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers. Journal of Applied Physics, 62 (2). 381-385 doi:10.1063/1.339808
Jackson, G. S., Hall, D. C., Holonyak, N., Hsieh, K. C., Epler, J. E., Paoli, T. L. (1987) Anomalous threshold current and time delays in index‐guided AlxGa1−xAs‐GaAs quantum‐well lasers. Journal of Applied Physics, 62 (11). 4356-4362 doi:10.1063/1.339068
Deppe, D. G., Jackson, G. S., Holonyak, N., Hall, D. C., Burnham, R. D., Thornton, R. L., Epler, J. E., Paoli, T. L. (1986) Single‐mode single‐lobe operation of broad area AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 49 (14). 883-885 doi:10.1063/1.97524
Meehan, K., Gavrilovic, P., Epler, J. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L., Streifer, W. (1985) Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers. Journal of Applied Physics, 57 (12). 5345-5348 doi:10.1063/1.334853
 
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