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Donnelly, J. P., Goodhue, W. D., Windhorn, T. H., Bailey, R. J., Lambert, S. A. (1987) Monolithic two‐dimensional surface‐emitting arrays of GaAs/AlGaAs diode lasers. Applied Physics Letters, 51 (15). 1138-1140 doi:10.1063/1.98763

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Reference TypeJournal (article/letter/editorial)
TitleMonolithic two‐dimensional surface‐emitting arrays of GaAs/AlGaAs diode lasers
JournalApplied Physics Letters
AuthorsDonnelly, J. P.Author
Goodhue, W. D.Author
Windhorn, T. H.Author
Bailey, R. J.Author
Lambert, S. A.Author
Year1987 (October 12)Volume51
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.98763Search in ResearchGate
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Mindat Ref. ID8481132Long-form Identifiermindat:1:5:8481132:1
GUID0
Full ReferenceDonnelly, J. P., Goodhue, W. D., Windhorn, T. H., Bailey, R. J., Lambert, S. A. (1987) Monolithic two‐dimensional surface‐emitting arrays of GaAs/AlGaAs diode lasers. Applied Physics Letters, 51 (15). 1138-1140 doi:10.1063/1.98763
Plain TextDonnelly, J. P., Goodhue, W. D., Windhorn, T. H., Bailey, R. J., Lambert, S. A. (1987) Monolithic two‐dimensional surface‐emitting arrays of GaAs/AlGaAs diode lasers. Applied Physics Letters, 51 (15). 1138-1140 doi:10.1063/1.98763
In(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

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Goodhue, W. D., Donnelly, J. P., Wang, C. A., Lincoln, G. A., Rauschenbach, K., Bailey, R. J., Johnson, G. D. (1991) Monolithic two‐dimensional surface‐emitting strained‐layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies. Applied Physics Letters, 59 (6). 632-634 doi:10.1063/1.105407
Donnelly, J. P., Goodhue, W. D., Bailey, R. J., Lincoln, G. A., Wang, C. A., Johnson, G. D. (1992) High quantum efficiency monolithic arrays of surface‐emitting AlGaAs diode lasers with dry‐etched vertical facets and parabolic deflecting mirrors. Applied Physics Letters, 61 (13). 1487-1489 doi:10.1063/1.107524
Windhorn, T. H., Goodhue, W. D. (1986) Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface. Applied Physics Letters, 48 (24). 1675-1677 doi:10.1063/1.96802
Windhorn, T. H., Metze, G. M. (1985) Room‐temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate. Applied Physics Letters, 47 (10). 1031-1033 doi:10.1063/1.96368
Donnelly, J. P., Bailey, R. J., Wang, C. A., Simpson, G. A., Rauschenbach, K. (1988) Hybrid approach to two‐dimensional surface‐emitting diode laser arrays. Applied Physics Letters, 53 (11). 938-940 doi:10.1063/1.100407
Walpole, J. N., Liau, Z. L. (1986) Monolithic two‐dimensional arrays of high‐power GaInAsP/InP surface‐emitting diode lasers. Applied Physics Letters, 48 (24). 1636-1638 doi:10.1063/1.97025
Windhorn, T. H., Metze, G. M., Tsaur, B‐Y., Fan, John C. C. (1984) AlGaAs double‐heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate. Applied Physics Letters, 45 (4). 309-311 doi:10.1063/1.95273
Liau, Z. L., Walpole, J. N. (1987) Large monolithic two‐dimensional arrays of GaInAsP/InP surface‐emitting lasers. Applied Physics Letters, 50 (9). 528-530 doi:10.1063/1.98148
Le, H. Q., Goodhue, W. D., Maki, P. A., Cecca, S. Di (1993) Diode‐laser‐pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4‐W average power. Applied Physics Letters, 63 (11). 1465-1467 doi:10.1063/1.109657
Zinkiewicz, L. M., Roth, T. J., Mawst, L. J., Tran, D., Botez, D. (1989) High‐power vertical‐cavity surface‐emitting AlGaAs/GaAs diode lasers. Applied Physics Letters, 54 (20). 1959-1961 doi:10.1063/1.101184
Botez, D., Hayashida, P., Mawst, L. J., Roth, T. J. (1988) Diffraction‐limited‐beam, high‐power operation fromX‐junction coupled phase‐locked arrays of AlGaAs/GaAs diode lasers. Applied Physics Letters, 53 (15). 1366-1368 doi:10.1063/1.99980
 
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