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Powell, M. J., van Berkel, C., French, I. D., Nicholls, D. H. (1987) Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors. Applied Physics Letters, 51 (16). 1242-1244 doi:10.1063/1.98692

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Reference TypeJournal (article/letter/editorial)
TitleBias dependence of instability mechanisms in amorphous silicon thin‐film transistors
JournalApplied Physics Letters
AuthorsPowell, M. J.Author
van Berkel, C.Author
French, I. D.Author
Nicholls, D. H.Author
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98692Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481144Long-form Identifiermindat:1:5:8481144:6
GUID0
Full ReferencePowell, M. J., van Berkel, C., French, I. D., Nicholls, D. H. (1987) Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors. Applied Physics Letters, 51 (16). 1242-1244 doi:10.1063/1.98692
Plain TextPowell, M. J., van Berkel, C., French, I. D., Nicholls, D. H. (1987) Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors. Applied Physics Letters, 51 (16). 1242-1244 doi:10.1063/1.98692
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

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van Berkel, C., Powell, M. J. (1987) Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors. Applied Physics Letters, 51 (14). 1094-1096 doi:10.1063/1.98751
Powell, M. J., van Berkel, C., Hughes, J. R. (1989) Time and temperature dependence of instability mechanisms in amorphous silicon thin‐film transistors. Applied Physics Letters, 54 (14). 1323-1325 doi:10.1063/1.100704
van Berkel, C., Powell, M. J. (1986) Photo‐field effect in amorphous silicon thin‐film transistors. Journal of Applied Physics, 60 (4). 1521-1527 doi:10.1063/1.337282
Deane, S. C., Powell, M. J., Hughes, J. R., French, I. D., Milne, W. I. (1990) Thermal bias annealing evidence for the defect pool in amorphous silicon thin‐film transistors. Applied Physics Letters, 57 (14). 1416-1418 doi:10.1063/1.103452
Wehrspohn, R. B., Deane, S. C., French, I. D., Gale, I. G., Powell, M. J., Brüggemann, R. (1999) Urbach energy dependence of the stability in amorphous silicon thin-film transistors. Applied Physics Letters, 74 (22). 3374-3376 doi:10.1063/1.123349
van Berkel, C., Hughes, J. R., Powell, M. J. (1989) Deep trapping controlled switching characteristics in amorphous silicon thin‐film transistors. Journal of Applied Physics, 66 (9). 4488-4495 doi:10.1063/1.343947
Hepburn, A. R., Marshall, J. M., Main, C., Powell, M. J., van Berkel, C. (1986) Metastable Defects in Amorphous-Silicon Thin-Film Transistors. Physical Review Letters, 57 (9). 1192 doi:10.1103/physrevlett.57.1192.3
Hepburn, A. R., Marshall, J. M., Main, C., Powell, M. J., van Berkel, C. (1986) Metastable Defects in Amorphous-Silicon Thin-Film Transistors. Physical Review Letters, 56 (20). 2215-2218 doi:10.1103/physrevlett.56.2215
Powell, M. J., Deane, S. C., Milne, W. I. (1992) Bias‐stress‐induced creation and removal of dangling‐bond states in amorphous silicon thin‐film transistors. Applied Physics Letters, 60 (2). 207-209 doi:10.1063/1.106965
Powell, M.J., Van Berkel, C, Deane, S.C. (1991) Instability mechanisms in amorphous silicon thin film transistors and the role of the defect pool. Journal of Non-Crystalline Solids, 137. 1215-1220 doi:10.1016/s0022-3093(05)80342-4
Schropp, R. E. I., Verwey, J. F. (1987) Instability mechanism in hydrogenated amorphous silicon thin‐film transistors. Applied Physics Letters, 50 (4). 185-187 doi:10.1063/1.97656
 
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