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Chen, J., Reddy, U. K., Mui, D., Peng, C. K., Morkoç, H. (1987) Enhanced ballistic transport in InGaAs/InAlAs hot‐electron transistors. Applied Physics Letters, 51 (16). 1254-1255 doi:10.1063/1.98696

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced ballistic transport in InGaAs/InAlAs hot‐electron transistors
JournalApplied Physics Letters
AuthorsChen, J.Author
Reddy, U. K.Author
Mui, D.Author
Peng, C. K.Author
Morkoç, H.Author
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98696Search in ResearchGate
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Mindat Ref. ID8481154Long-form Identifiermindat:1:5:8481154:3
GUID0
Full ReferenceChen, J., Reddy, U. K., Mui, D., Peng, C. K., Morkoç, H. (1987) Enhanced ballistic transport in InGaAs/InAlAs hot‐electron transistors. Applied Physics Letters, 51 (16). 1254-1255 doi:10.1063/1.98696
Plain TextChen, J., Reddy, U. K., Mui, D., Peng, C. K., Morkoç, H. (1987) Enhanced ballistic transport in InGaAs/InAlAs hot‐electron transistors. Applied Physics Letters, 51 (16). 1254-1255 doi:10.1063/1.98696
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

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Reddy, U. K., Chen, J., Peng, C. K., Morkoç, H. (1986) InGaAs/InAlAs hot‐electron transistor. Applied Physics Letters, 48 (26). 1799-1801 doi:10.1063/1.96791
Kuzuhara, M., Kim, K., Arnold, D., Hess, K. (1988) Ballistic electron transport across collector barriers in AlGaAs/GaAs hot‐electron transistors. Applied Physics Letters, 52 (15). 1252-1254 doi:10.1063/1.99172
Peng, C. K., Chen, J., Morkoç, H. (1988) Contact regrowth technique for low‐resistance nonalloyed contacts to the hot‐electron transistor. Applied Physics Letters, 53 (18). 1738-1740 doi:10.1063/1.99811
Chen, C. J., Choi, K. K., Chang, W. H., Tsui, D. C. (1998) Corrugated infrared hot-electron transistors. Applied Physics Letters, 73 (9). 1272-1274 doi:10.1063/1.122147
Peng, C. K., Ketterson, A., Morkoç, H., Solomon, P. M. (1986) Determination of the conduction‐band discontinuity between In0.53Ga0.47As/In0.52Al0.48As usingn+‐InGaAs/InAlAs/n−‐InGaAs capacitors. Journal of Applied Physics, 60 (5). 1709-1712 doi:10.1063/1.337262
Xu, Jingming, Shur, Michael (1987) Ballistic transport in hot‐electron transistors. Journal of Applied Physics, 62 (9). 3816-3820 doi:10.1063/1.339223
Ji, G., Huang, D., Reddy, U. K., Henderson, T. S., Houdré, R., Morkoç, H. (1987) Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells. Journal of Applied Physics, 62 (8). 3366-3373 doi:10.1063/1.339299
Arora, Vijay K., Mui, David S. L., Morkoç, H. (1987) Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype. Applied Physics Letters, 50 (16). 1080-1082 doi:10.1063/1.97976
Seo, K., Heiblum, M., Knoedler, C. M., Hong, W‐P., Bhattacharya, P. (1988) Pseudomorphic InGaAs base ballistic hot‐electron device. Applied Physics Letters, 53 (20). 1946-1948 doi:10.1063/1.100331
Reddy, U. K., Ji, G., Huang, D., Munns, G., Morkoç, H. (1987) Investigation of GaAs/AlxGa1−xAs and InyGa1−yAs/GaAs superlattices on Si substrates. Applied Physics Letters, 50 (24). 1748-1750 doi:10.1063/1.98250
Levi, A. F. J., Chiu, T. H. (1987) Room‐temperature operation of hot‐electron transistors. Applied Physics Letters, 51 (13). 984-986 doi:10.1063/1.98784
 
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