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Hull, R., Fischer‐Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. (1987) Effect of substrate surface structure on nucleation of GaAs on Si(100). Applied Physics Letters, 51 (21). 1723-1725 doi:10.1063/1.98556

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Reference TypeJournal (article/letter/editorial)
TitleEffect of substrate surface structure on nucleation of GaAs on Si(100)
JournalApplied Physics Letters
AuthorsHull, R.Author
Fischer‐Colbrie, A.Author
Rosner, S. J.Author
Koch, S. M.Author
Harris, J. S.Author
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98556Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481566Long-form Identifiermindat:1:5:8481566:4
GUID0
Full ReferenceHull, R., Fischer‐Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. (1987) Effect of substrate surface structure on nucleation of GaAs on Si(100). Applied Physics Letters, 51 (21). 1723-1725 doi:10.1063/1.98556
Plain TextHull, R., Fischer‐Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. (1987) Effect of substrate surface structure on nucleation of GaAs on Si(100). Applied Physics Letters, 51 (21). 1723-1725 doi:10.1063/1.98556
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

See Also

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Rosner, S. J., Koch, S. M., Harris, J. S. (1986) Nucleation and initial growth of GaAs on Si substrate. Applied Physics Letters, 49 (26). 1764-1766 doi:10.1063/1.97237
Hull, R., Rosner, S. J., Koch, S. M., Harris, J. S. (1986) Atomic structure of the GaAs/Si interface. Applied Physics Letters, 49 (25). 1714-1716 doi:10.1063/1.97224
Hull, R., Fischer‐Colbrie, A. (1987) Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition. Applied Physics Letters, 50 (13). 851-853 doi:10.1063/1.98011
Koch, S.M., Rosner, S.J., Hull, R., Yoffe, G.W., Harris, J.S. (1987) The growth of GaAs on Si by MBE. Journal of Crystal Growth, 81 (1). 205-213 doi:10.1016/0022-0248(87)90392-7
Pearton, S. J., Vernon, S. M., Short, K. T., Brown, J. M., Abernathy, C. R., Caruso, R., Chu, S. N. G., Haven, V. E., Bunker, S. N. (1987) Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator. Applied Physics Letters, 51 (15). 1188-1190 doi:10.1063/1.98728
Grundmann, M., Christen, J., Bimberg, D., Fischer‐Colbrie, A., Hull, R. (1989) Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons. Journal of Applied Physics, 66 (5). 2214-2216 doi:10.1063/1.344288
Vernon, S. M., Pearton, S. J., Gibson, J. M., Short, K. T., Haven, V. E. (1987) Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si. Applied Physics Letters, 50 (17). 1161-1163 doi:10.1063/1.97949
Sprung, K.‐R., Wilke, K., Heymann, G., Varrio, J., Pessa, M. (1993) GaAs single‐domain growth on exact (100) Si substrate. Applied Physics Letters, 62 (21). 2711-2712 doi:10.1063/1.109240
Chand, N., Fischer, R., Sergent, A. M., Lang, D. V., Pearton, S. J., Cho, A. Y. (1987) Electrical activity of defects in molecular beam epitaxially grown GaAs on Si and its reduction by rapid thermal annealing. Applied Physics Letters, 51 (13). 1013-1015 doi:10.1063/1.98815
Solomon, G. S., Trezza, J. A., Harris, J. S. (1995) Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs. Applied Physics Letters, 66 (8). 991-993 doi:10.1063/1.113822
Pearton, S. J., Malm, D. L., Heimbrook, L. A., Kovalchick, J., Abernathy, C. R., Caruso, R., Vernon, S. M., Haven, V. E. (1987) Heterointerface stability in GaAs‐on‐Si grown by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (9). 682-684 doi:10.1063/1.98333
 
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