Vote for your favorite mineral in #MinCup25! - Carpathite vs. Leucite
Brace for oddness in a match between one of the very few hydrocarbon minerals carpathite and the temperature-flipping mineral leucite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Farrow, L. A., Sandroff, C. J., Tamargo, M. C. (1987) Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation. Applied Physics Letters, 51 (23). 1931-1933 doi:10.1063/1.98304

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleRaman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation
JournalApplied Physics Letters
AuthorsFarrow, L. A.Author
Sandroff, C. J.Author
Tamargo, M. C.Author
Year1987 (December 7)Volume51
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.98304Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481664Long-form Identifiermindat:1:5:8481664:5
GUID0
Full ReferenceFarrow, L. A., Sandroff, C. J., Tamargo, M. C. (1987) Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation. Applied Physics Letters, 51 (23). 1931-1933 doi:10.1063/1.98304
Plain TextFarrow, L. A., Sandroff, C. J., Tamargo, M. C. (1987) Raman scattering measurements of decreased barrier heights in GaAs following surface chemical passivation. Applied Physics Letters, 51 (23). 1931-1933 doi:10.1063/1.98304
In(1987, December) Applied Physics Letters Vol. 51 (23) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Sandroff, C. J., Nottenburg, R. N., Bischoff, J.‐C., Bhat, R. (1987) Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation. Applied Physics Letters, 51 (1). 33-35 doi:10.1063/1.98877
Sandroff, C. J., Hegde, M. S., Farrow, L. A., Chang, C. C., Harbison, J. P. (1989) Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds. Applied Physics Letters, 54 (4). 362-364 doi:10.1063/1.101451
Sandroff, C. J., Hegde, M. S., Farrow, L. A., Bhat, R., Harbison, J. P., Chang, C. C. (1990) Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions. Journal of Applied Physics, 67 (1). 586-588 doi:10.1063/1.345201
Yablonovitch, E., Sandroff, C. J., Bhat, R., Gmitter, T. (1987) Nearly ideal electronic properties of sulfide coated GaAs surfaces. Applied Physics Letters, 51 (6). 439-441 doi:10.1063/1.98415
Gayen, Sanjukta, Ermler, Walter C., Sandroff, Claude J. (1991) Theoretical study of GaAs surface passivation with Se. The Journal of Chemical Physics, 94 (1). 729-733 doi:10.1063/1.460341
Skromme, B. J., Sandroff, C. J., Yablonovitch, E., Gmitter, T. (1987) Effects of passivating ionic films on the photoluminescence properties of GaAs. Applied Physics Letters, 51 (24). 2022-2024 doi:10.1063/1.98280
Lockwood, D. J., Dharma‐wardana, M. W. C., Moore, W. T., Devine, R. L. S. (1987) Raman scattering study of folded acoustic phonons in GaAs/InxGa1−xAs strained‐layer superlattices. Applied Physics Letters, 51 (5). 361-363 doi:10.1063/1.98441
Turco, F. S., Sandroff, C. J., Hwang, D. M., Ravi, T. S., Tamargo, M. C. (1990) High‐quality molecular‐beam epitaxial regrowth of (Al,Ga)As on Se‐modified (100) GaAs surfaces. Journal of Applied Physics, 68 (3). 1038-1042 doi:10.1063/1.346742
Sandroff, C.J., Farrow, L.A. (1986) Aggregated microcrystallites: Raman scattering from a new class of disordered solids. Chemical Physics Letters, 130. 458-462 doi:10.1016/0009-2614(86)80505-x
Sandroff, C. J., Turco‐Sandroff, F. S., Florez, L. T., Harbison, J. P. (1991) Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence. Journal of Applied Physics, 70 (7). 3632-3635 doi:10.1063/1.349210
Huang, C. I., Paulus, M. J., Bozada, C. A., Dudley, S. C., Evans, K. R., Stutz, C. E., Jones, R. L., Cheney, M. E. (1987) AlGaAs/GaAs double barrier diodes with high peak‐to‐valley current ratio. Applied Physics Letters, 51 (2). 121-123 doi:10.1063/1.98588
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 6, 2025 23:55:22
Go to top of page