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Sakaki, H., Noda, T., Hirakawa, K., Tanaka, M., Matsusue, T. (1987) Interface roughness scattering in GaAs/AlAs quantum wells. Applied Physics Letters, 51 (23). 1934-1936 doi:10.1063/1.98305

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Reference TypeJournal (article/letter/editorial)
TitleInterface roughness scattering in GaAs/AlAs quantum wells
JournalApplied Physics Letters
AuthorsSakaki, H.Author
Noda, T.Author
Hirakawa, K.Author
Tanaka, M.Author
Matsusue, T.Author
Year1987 (December 7)Volume51
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.98305Search in ResearchGate
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Mindat Ref. ID8481666Long-form Identifiermindat:1:5:8481666:3
GUID0
Full ReferenceSakaki, H., Noda, T., Hirakawa, K., Tanaka, M., Matsusue, T. (1987) Interface roughness scattering in GaAs/AlAs quantum wells. Applied Physics Letters, 51 (23). 1934-1936 doi:10.1063/1.98305
Plain TextSakaki, H., Noda, T., Hirakawa, K., Tanaka, M., Matsusue, T. (1987) Interface roughness scattering in GaAs/AlAs quantum wells. Applied Physics Letters, 51 (23). 1934-1936 doi:10.1063/1.98305
In(1987, December) Applied Physics Letters Vol. 51 (23) AIP Publishing

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Noda, T., Tanaka, M., Sakaki, H. (1990) Correlation length of interface roughness and its enhancement in molecular beam epitaxy grown GaAs/AlAs quantum wells studied by mobility measurement. Applied Physics Letters, 57 (16). 1651-1653 doi:10.1063/1.104077
Hirakawa, K., Noda, T., Sakaki, H. (1988) Interface roughness in AlAs/GaAs quantum wells characterized by the mobility of two-dimensional electrons. Surface Science, 196 (1). 365-366 doi:10.1016/0039-6028(88)90710-8
Noda, T., Tanaka, M., Sakaki, H. (1991) Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement. Journal of Crystal Growth, 111 (1). 348-352 doi:10.1016/0022-0248(91)90999-l
Someya, T., Akiyama, H., Kadoya, Y., Noda, T., Matsusue, T., Noge, H., Sakaki, H. (1993) Detection of oxygen incorporated in molecular‐beam epitaxy grown GaAs‐on‐AlAs interfaces and AlAs layers by secondary ion mass spectrometry. Applied Physics Letters, 63 (14). 1924-1926 doi:10.1063/1.110650
Tanaka, Masaaki, Sakaki, Hiroyuki (1988) Interface roughness of GaAs‐AlAs quantum wells grown by molecular‐beam epitaxy:  Misorientation effects. Journal of Applied Physics, 64 (9). 4503-4508 doi:10.1063/1.341277
Noda, T., Fahy, M.R., Matsusue, T., Joyce, B.A., Sakaki, H. (1993) MBE growth and properties of monolayer and submonolayer InAs layer embedded in GaAs/AlAs quantum wells. Journal of Crystal Growth, 127 (1). 783-787 doi:10.1016/0022-0248(93)90732-c
Fasol, G., Tanaka, M., Sakaki, H., Horikoshi, Y. (1988) Interface roughness and the dispersion of confined LO phonons in GaAs/AlAs quantum wells. Physical Review B, 38 (9) 6056-6065 doi:10.1103/physrevb.38.6056
Matsusue, Toshio, Sakaki, Hiroyuki (1987) Radiative recombination coefficient of free carriers in GaAs‐AlGaAs quantum wells and its dependence on temperature. Applied Physics Letters, 50 (20). 1429-1431 doi:10.1063/1.97844
Noda, T., Tanaka, M., Sakaki, H. (1989) Electron mobility and roughness scattering in Potential Inserted Quantum Wells (PI-QWs). Journal of Crystal Growth, 95 (1). 60-63 doi:10.1016/0022-0248(89)90351-5
Unuma, T., Sekine, N., Hirakawa, K. (2006) Dephasing of Bloch oscillating electrons in GaAs-based superlattices due to interface roughness scattering. Applied Physics Letters, 89 (16). 161913pp. doi:10.1063/1.2360911
Unuma, Takeya, Yoshita, Masahiro, Noda, Takeshi, Sakaki, Hiroyuki, Akiyama, Hidefumi (2003) Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities. Journal of Applied Physics, 93 (3). 1586-1597 doi:10.1063/1.1535733
 
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