Vote for your favorite mineral in #MinCup25! - Cuprosklodowskite vs. Ikaite
It's radioactive #cuprosklodowskite vs ephemeral #ikaite for today's match.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Neri, B., Olivo, P., Riccò, B. (1987) Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown. Applied Physics Letters, 51 (25). 2167-2169 doi:10.1063/1.98930

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleLow‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown
JournalApplied Physics Letters
AuthorsNeri, B.Author
Olivo, P.Author
Riccò, B.Author
Year1987 (December 21)Volume51
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.98930Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481807Long-form Identifiermindat:1:5:8481807:8
GUID0
Full ReferenceNeri, B., Olivo, P., Riccò, B. (1987) Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown. Applied Physics Letters, 51 (25). 2167-2169 doi:10.1063/1.98930
Plain TextNeri, B., Olivo, P., Riccò, B. (1987) Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown. Applied Physics Letters, 51 (25). 2167-2169 doi:10.1063/1.98930
In(1987, December) Applied Physics Letters Vol. 51 (25) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Mercha, A., Simoen, E., van Meer, H., Claeys, C. (2003) Low-frequency noise overshoot in ultrathin gate oxide silicon-on-insulator metal–oxide–semiconductor field-effect transistors. Applied Physics Letters, 82 (11). 1790-1792 doi:10.1063/1.1561575
Kobayashi, Keiji (1987) Polarizable capacitance versus voltage characteristics for metal, oxide, and silicon capacitors passivated by various oxide glasses. Applied Physics Letters, 51 (20). 1600-1601 doi:10.1063/1.98567
Hook, Terence B., Ma, T.‐P. (1987) Electron trapping during high‐field tunneling injection in metal‐oxide‐silicon capacitors: The effect of gate‐induced strain. Journal of Applied Physics, 62 (3). 931-938 doi:10.1063/1.339703
Okada, Kenji (2003) Soft breakdown of oxide–nitride–oxide stacked gate dielectrics used in metal–oxide–nitride–oxide–silicon-based flash memories. Applied Physics Letters, 83 (26). 5542-5544 doi:10.1063/1.1637149
Olivo, P., Riccò, B., Sangiorgi, E. (1986) High‐field‐induced voltage‐dependent oxide charge. Applied Physics Letters, 48 (17). 1135-1137 doi:10.1063/1.96448
Yun, B. H. (1981) Improved oxide of metal‐oxide‐silicon capacitors resulting from backsurface argon implantation. Applied Physics Letters, 39 (4). 330-332 doi:10.1063/1.92710
Iannaccone, G., Crupi, F., Neri, B., Lombardo, S. (2000) Suppressed shot noise in trap-assisted tunneling of metal–oxide–semiconductor capacitors. Applied Physics Letters, 77 (18). 2876-2878 doi:10.1063/1.1321735
Milgram, Alvin A. (1990) Ion‐induced electrical breakdown in metal‐oxide‐silicon capacitors. Journal of Applied Physics, 67 (3). 1461-1470 doi:10.1063/1.345652
Avni, E., Shappir, J. (1987) Oxide trapping under spatially variable oxide electric field in the metal‐oxide‐silicon structure. Applied Physics Letters, 51 (6). 463-465 doi:10.1063/1.98423
Reed, Michael L., Fishbein, Bruce, Plummer, James D. (1985) Rapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors. Applied Physics Letters, 47 (4). 400-402 doi:10.1063/1.96124
(2023) Low-frequency noise characterization of gate oxide trap depth distribution of MOSFETs. Applied Physics Letters, 122 (22) doi:10.1063/5.0147563
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 14, 2025 05:45:32
Go to top of page