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Matsui, Masayoshi, Kazuno, Tadao (1987) Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs. Applied Physics Letters, 51 (9). 658-660 doi:10.1063/1.98325

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Reference TypeJournal (article/letter/editorial)
TitleAbnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs
JournalApplied Physics Letters
AuthorsMatsui, MasayoshiAuthor
Kazuno, TadaoAuthor
Year1987 (August 31)Volume51
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.98325Search in ResearchGate
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Mindat Ref. ID8482310Long-form Identifiermindat:1:5:8482310:4
GUID0
Full ReferenceMatsui, Masayoshi, Kazuno, Tadao (1987) Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs. Applied Physics Letters, 51 (9). 658-660 doi:10.1063/1.98325
Plain TextMatsui, Masayoshi, Kazuno, Tadao (1987) Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs. Applied Physics Letters, 51 (9). 658-660 doi:10.1063/1.98325
In(1987, August) Applied Physics Letters Vol. 51 (9) AIP Publishing

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Lagowski, J., Bugajski, M., Matsui, M., Gatos, H. C. (1987) Optical characterization of semi‐insulating GaAs: Determination of the Fermi energy, the concentration of the midgap EL2 level and its occupancy. Applied Physics Letters, 51 (7). 511-513 doi:10.1063/1.98382
Brozel, M. R., Grant, I., Ware, R. M., Stirland, D. J. (1983) Direct observation of the principal deep level (EL2) in undoped semi‐insulating GaAs. Applied Physics Letters, 42 (7). 610-612 doi:10.1063/1.94019
Dischler, B., Fuchs, F., Kaufmann, U. (1986) Photoresponse of the EL2 absorption in undoped semi‐insulating GaAs. Applied Physics Letters, 48 (19). 1282-1284 doi:10.1063/1.97004
Walukiewicz, W., Lagowski, J., Gatos, H. C. (1983) On the optical evaluation of the EL2 deep level concentration in semi‐insulating GaAs. Applied Physics Letters, 43 (2). 192-194 doi:10.1063/1.94277
Alvarez, A., Jiménez, J., González, M. A. (1996) Metastable transformation of EL2 in semi‐insulating GaAs: The role of the actuator level and the photoionization of EL2. Applied Physics Letters, 68 (21). 2959-2961 doi:10.1063/1.116368
Desnica, U. V., Desnica, Dunja I., Šantić, B. (1991) EL2 related deep traps in semi‐insulating GaAs. Applied Physics Letters, 58 (3). 278-280 doi:10.1063/1.104660
Kiyama, M., Tatsumi, M., Yamada, M. (2005) Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs. Applied Physics Letters, 86 (1). 12102pp. doi:10.1063/1.1844040
Brierley, Steven K. (1987) Distortions in optical deep level transient spectroscopy on semi‐insulating GaAs with a conducting layer of finite thickness. Journal of Applied Physics, 61 (2). 567-573 doi:10.1063/1.338260
Morrow, Richard A. (1987) Electrical activation of silicon implanted in semi‐insulating GaAs: Role of boron and the midgap electron trap (EL2). Journal of Applied Physics, 62 (9). 3671-3676 doi:10.1063/1.339247
Kabiraj, D., Ghosh, Subhasis (2005) “EL2” revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs. Applied Physics Letters, 87 (25). 252118pp. doi:10.1063/1.2150579
Dobrilla, P. (1988) Stoichiometry related deep levels in undoped, semi‐insulating GaAs. Journal of Applied Physics, 64 (12). 6767-6769 doi:10.1063/1.342010
 
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