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Murakami, Masanori, Price, W. H. (1987) Thermally stable, low‐resistance NiInW ohmic contacts ton‐type GaAs. Applied Physics Letters, 51 (9). 664-666 doi:10.1063/1.98327

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Reference TypeJournal (article/letter/editorial)
TitleThermally stable, low‐resistance NiInW ohmic contacts ton‐type GaAs
JournalApplied Physics Letters
AuthorsMurakami, MasanoriAuthor
Price, W. H.Author
Year1987 (August 31)Volume51
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.98327Search in ResearchGate
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Mindat Ref. ID8482314Long-form Identifiermindat:1:5:8482314:0
GUID0
Full ReferenceMurakami, Masanori, Price, W. H. (1987) Thermally stable, low‐resistance NiInW ohmic contacts ton‐type GaAs. Applied Physics Letters, 51 (9). 664-666 doi:10.1063/1.98327
Plain TextMurakami, Masanori, Price, W. H. (1987) Thermally stable, low‐resistance NiInW ohmic contacts ton‐type GaAs. Applied Physics Letters, 51 (9). 664-666 doi:10.1063/1.98327
In(1987, August) Applied Physics Letters Vol. 51 (9) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Shih, Yih‐Cheng, Murakami, Masanori, Price, W. H. (1989) Thermally stable ohmic contacts ton‐type GaAs. IV. Role of Ni on NiInW contacts. Journal of Applied Physics, 65 (9). 3539-3545 doi:10.1063/1.342628
Murakami, Masanori, Price, W. H., Greiner, J. H., Feder, J. D., Parks, C. C. (1989) Thermally stable ohmic contacts ton‐type GaAs. V. Metal‐semiconductor field‐effect transistors with NiInW ohmic contacts. Journal of Applied Physics, 65 (9). 3546-3551 doi:10.1063/1.342629
Murakami, Masanori, Price, W. H., Norcott, M., Hallali, P.‐E. (1990) Thermally stable ohmic contacts ton‐type GaAs. VII. Addition of Ge or Si to NiInW ohmic contacts. Journal of Applied Physics, 68 (5). 2468-2474 doi:10.1063/1.346508
Murakami, Masanori, Shih, Yih‐Cheng, Price, W. H., Wilkie, E. L., Childs, K. D., Parks, C. C. (1988) Thermally stable ohmic contacts ton‐type GaAs. III. GeInW and NiInW contact metals. Journal of Applied Physics, 64 (4). 1974-1982 doi:10.1063/1.341752
Murakami, Masanori, Lustig, Naftali, Price, W. H., Fleischman, A. (1991) Thermally stable, low‐resistance NiInWNxohmic contacts ton‐type GaAs prepared by sputter deposition. Applied Physics Letters, 59 (19). 2409-2411 doi:10.1063/1.106031
Kim, H.‐J., Murakami, Masanori, Price, W. H., Norcott, M. (1990) Thermally stable ohmic contacts ton‐type GaAs. VI. InW contact metal. Journal of Applied Physics, 67 (9). 4183-4189 doi:10.1063/1.344955
Hallali, P.‐E., Murakami, Masanori, Price, W. H., Norcott, M. H. (1991) Thermally stable ohmic contacts top‐type GaAs. IX. NiInW and NiIn(Mn)W contact metals. Journal of Applied Physics, 70 (12). 7443-7448 doi:10.1063/1.349740
Lustig, Naftali, Murakami, Masanori, Norcott, Maurice, McGann, Kevin (1991) Low Au content thermally stable NiGe(Au)W ohmic contacts ton‐type GaAs. Applied Physics Letters, 58 (19). 2093-2095 doi:10.1063/1.105021
Murakami, Masanori, Price, W. H., Shih, Yih‐Cheng, Childs, K. D., Furman, B. K., Tiwari, S. (1987) Thermally stable ohmic contacts ton‐type GaAs. I. MoGeW contact metal. Journal of Applied Physics, 62 (8). 3288-3294 doi:10.1063/1.339336
Murakami, Masanori, Price, W. H., Shih, Yih‐Cheng, Braslau, N., Childs, K. D., Parks, C. C. (1987) Thermally stable ohmic contacts ton‐type GaAs. II. MoGeInW contact metal. Journal of Applied Physics, 62 (8). 3295-3303 doi:10.1063/1.339337
Kim, H.‐J., Murakami, Masanori, Wright, S. L., Norcott, M., Price, W. H., La Tulipe, D. (1990) Thermally stable ohmic contacts ton‐type GaAs. VIII. Sputter‐deposited InAs contacts. Journal of Applied Physics, 68 (5). 2475-2481 doi:10.1063/1.346509
 
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