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Allen, L. T. P., Weber, E. R., Washburn, J., Pao, Y. C. (1987) Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Applied Physics Letters, 51 (9). 670-672 doi:10.1063/1.98329

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Reference TypeJournal (article/letter/editorial)
TitleDevice quality growth and characterization of (110) GaAs grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsAllen, L. T. P.Author
Weber, E. R.Author
Washburn, J.Author
Pao, Y. C.Author
Year1987 (August 31)Volume51
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.98329Search in ResearchGate
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Mindat Ref. ID8482317Long-form Identifiermindat:1:5:8482317:7
GUID0
Full ReferenceAllen, L. T. P., Weber, E. R., Washburn, J., Pao, Y. C. (1987) Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Applied Physics Letters, 51 (9). 670-672 doi:10.1063/1.98329
Plain TextAllen, L. T. P., Weber, E. R., Washburn, J., Pao, Y. C. (1987) Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy. Applied Physics Letters, 51 (9). 670-672 doi:10.1063/1.98329
In(1987, August) Applied Physics Letters Vol. 51 (9) AIP Publishing

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Allen, L.T.P., Weber, E.R., Washburn, J., Pao, Y.C., Elliot, A.G. (1988) Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy. Journal of Crystal Growth, 87 (2). 193-200 doi:10.1016/0022-0248(88)90164-9
Ribas, P., Krishnamoorthy, V., Park, R. M. (1990) Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy. Applied Physics Letters, 57 (10). 1040-1042 doi:10.1063/1.103559
Chai, Young G., Pao, Y‐C., Hierl, T. (1985) Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy. Applied Physics Letters, 47 (12). 1327-1329 doi:10.1063/1.96269
Sakai, Shiro, Matyi, R. J., Shichijo, H. (1987) Selective liquid phase epitaxy and defect reduction in GaAs grown on GaAs‐coated silicon by molecular beam epitaxy. Applied Physics Letters, 51 (23). 1913-1915 doi:10.1063/1.98298
Dingle, R., Weisbuch, C., Störmer, H. L., Morkoç, H., Cho, A. Y. (1982) Characterization of high purity GaAs grown by molecular beam epitaxy. Applied Physics Letters, 40 (6). 507-510 doi:10.1063/1.93159
Potts, J. E., Smith, T. L., Cheng, H. (1987) Electron beam pumped lasing in ZnSe grown by molecular beam epitaxy. Applied Physics Letters, 50 (1). 7-9 doi:10.1063/1.98130
Ruvimov, Sergei, Liliental-Weber, Zuzanna, Washburn, Jack, Drummond, Timothy J., Hafich, Michael, Lee, Stephen R. (1997) Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy. Applied Physics Letters, 71 (20). 2931-2933 doi:10.1063/1.120219
Kaminska, M., Liliental‐Weber, Z., Weber, E. R., George, T., Kortright, J. B., Smith, F. W., Tsaur, B‐Y., Calawa, A. R. (1989) Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures. Applied Physics Letters, 54 (19). 1881-1883 doi:10.1063/1.101229
Lin, T. L., Sadwick, L., Wang, K. L., Kao, Y. C., Hull, R., Nieh, C. W., Jamieson, D. N., Liu, J. K. (1987) Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon. Applied Physics Letters, 51 (11). 814-816 doi:10.1063/1.98821
Chiang, T. Y., Yiin, D. H., Liu, E. H., Yew, T. R. (1993) Low‐temperature (490 °C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy. Applied Physics Letters, 62 (9). 985-987 doi:10.1063/1.108508
Hafich, M. J., Quigley, J. H., Owens, R. E., Robinson, G. Y., Li, Du, Otsuka, N. (1989) High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy. Applied Physics Letters, 54 (26). 2686-2688 doi:10.1063/1.101035
 
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