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Uchitomi, Naotaka, Mikami, Hitoshi, Toyoda, Nobuyuki, Nii, Riro (1988) Experimental study on the correlation between thermal‐wave signals and dopant profiles for silicon‐implanted GaAs. Applied Physics Letters, 52 (1). 30-32 doi:10.1063/1.99307

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Reference TypeJournal (article/letter/editorial)
TitleExperimental study on the correlation between thermal‐wave signals and dopant profiles for silicon‐implanted GaAs
JournalApplied Physics Letters
AuthorsUchitomi, NaotakaAuthor
Mikami, HitoshiAuthor
Toyoda, NobuyukiAuthor
Nii, RiroAuthor
Year1988 (January 4)Volume52
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.99307Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482364Long-form Identifiermindat:1:5:8482364:5
GUID0
Full ReferenceUchitomi, Naotaka, Mikami, Hitoshi, Toyoda, Nobuyuki, Nii, Riro (1988) Experimental study on the correlation between thermal‐wave signals and dopant profiles for silicon‐implanted GaAs. Applied Physics Letters, 52 (1). 30-32 doi:10.1063/1.99307
Plain TextUchitomi, Naotaka, Mikami, Hitoshi, Toyoda, Nobuyuki, Nii, Riro (1988) Experimental study on the correlation between thermal‐wave signals and dopant profiles for silicon‐implanted GaAs. Applied Physics Letters, 52 (1). 30-32 doi:10.1063/1.99307
In(1988, January) Applied Physics Letters Vol. 52 (1) AIP Publishing

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Uchitomi, Naotaka, Mikami, Hitoshi, Toyoda, Nobuyuki (1990) Highly uniform ion implants into GaAs by wafer rotation. Journal of Applied Physics, 67 (9). 4042-4044 doi:10.1063/1.344960
Mikami, Hitoshi, Uchitomi, Naotaka, Toyoda, Nobuyuki (1988) Analysis of planar channeling effects on the threshold voltage uniformity of GaAs metal‐semiconductor field‐effect transistors using stereographic projection. Journal of Applied Physics, 64 (2). 610-613 doi:10.1063/1.341950
Uchitomi, Naotaka, Mikami, Hitoshi, Tomita, Kenichi, Toyoda, Nobuyuki (1989) Characterization of Si +-implanted GaAs substrates using thermal-wave measurement. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 810-813 doi:10.1016/0168-583x(89)90303-0
Steiner, Klaus, Uchitomi, Naotaka, Toyoda, Nobuyuki (1990) Mobility Profiles in Submicron WNx-BPLDD-GaAs MESFETs. Japanese Journal of Applied Physics, 29. 489-494 doi:10.1143/jjap.29.489
Steiner, Klaus, Mikami, Hitoshi, Nishihori, Kazuya, Uchitomi, Naotaka (1991) Mobility Profiles in Self-Aligned WNX-Undoped AlGaAs/n-GaAs/Undoped AlGaAs Doped-Channel Hetero-MISFETs. Japanese Journal of Applied Physics, 30. 29-30 doi:10.1143/jjap.30.29
Uchitomi, Naotaka, Nagaoka, Masami, Toyoda, Nobuyuki (1989) Characterization of refractory W, WNx, and WSixfilms on GaAs using thermoreflectance measurements. Journal of Applied Physics, 65 (4). 1743-1746 doi:10.1063/1.342948
Schink, H., Schnell, R. D. (1988) Influence of striations in GaAs on the activated profiles of implanted silicon. Applied Physics Letters, 53 (9). 764-766 doi:10.1063/1.99826
Srinivasan, G., Sealy, B. J. (1990) Correlation between electronegativity and dopant activity in ion‐implanted semi‐insulating GaAs. Applied Physics Letters, 57 (4). 378-379 doi:10.1063/1.103697
Lee, D. H., Malbon, R. M. (1977) Ion‐implanted silicon profiles in GaAs. Applied Physics Letters, 30 (7). 327-329 doi:10.1063/1.89386
Subrahmanyan, Ravi, Massoud, Hisham Z., Fair, Richard B. (1988) Experimental characterization of two‐dimensional dopant profiles in silicon using chemical staining. Applied Physics Letters, 52 (25). 2145-2147 doi:10.1063/1.99559
Kanai, Yasuo, Nii, Riro, Watanabe, Naozo (1961) Electrical Properties of Lead Telluride. Journal of Applied Physics, 32 (10). 2146-2150 doi:10.1063/1.1777033
 
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