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Yasuda, T., Mitsuishi, I., Kukimoto, H. (1988) Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe. Applied Physics Letters, 52 (1). 57-59 doi:10.1063/1.99317

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Reference TypeJournal (article/letter/editorial)
TitleMetalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe
JournalApplied Physics Letters
AuthorsYasuda, T.Author
Mitsuishi, I.Author
Kukimoto, H.Author
Year1988 (January 4)Volume52
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.99317Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482384Long-form Identifiermindat:1:5:8482384:9
GUID0
Full ReferenceYasuda, T., Mitsuishi, I., Kukimoto, H. (1988) Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe. Applied Physics Letters, 52 (1). 57-59 doi:10.1063/1.99317
Plain TextYasuda, T., Mitsuishi, I., Kukimoto, H. (1988) Metalorganic vapor phase epitaxy of low‐resistivityp‐type ZnSe. Applied Physics Letters, 52 (1). 57-59 doi:10.1063/1.99317
In(1988, January) Applied Physics Letters Vol. 52 (1) AIP Publishing

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Yodo, T., Koyama, T., Ueda, H., Yamashita, K. (1989) ZnSe homoepitaxial layers grown at very low temperature by atmospheric pressure metalorganic vapor‐phase epitaxy. Journal of Applied Physics, 65 (7). 2728-2733 doi:10.1063/1.342760
Shibata, Noriyoshi, Ohki, Akira, Zembutsu, Sakae (1988) Use of Ethyliodide in Preparation of Low-Resistivity n-Type ZnSe by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l251
Grützmacher, D., Wolter, K., Jürgensen, H., Balk, P., Bulle Lieuwma, C. W. T. (1988) Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (11). 872-873 doi:10.1063/1.99258
Inoue, K., Yanashima, K., Takahashi, T., Hwang, J.S., Hara, K., Munekata, H., Kukimoto, H. (1996) Growth of p-type ZnSe by metalorganic vapor phase epitaxy using ethylazide as a new nitrogen source. Journal of Crystal Growth, 159 (1). 130-133 doi:10.1016/0022-0248(95)00760-1
Yokogawa, Toshiya, Ogura, Mototsugu, Kajiwara, Takao (1987) High quality ZnSe films grown by low pressure metalorganic vapor phase epitaxy using methylalkyls. Applied Physics Letters, 50 (16). 1065-1067 doi:10.1063/1.97971
Morimoto, Keizo, Fujino, Takahiro (1993) Nitrogen radical doping during metalorganic vapor phase epitaxy of ZnSe. Applied Physics Letters, 63 (17). 2384-2386 doi:10.1063/1.110482
Ohki, Akira, Shibata, Noriyoshi, Zembutsu, Sakae (1988) Nitrogen Doped p-Type ZnSe Layer Grown by Metalorganic Vapor Phase Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l909
Yokogawa, Toshiya, Ogura, Mototsugu, Kajiwara, Takao (1986) ZnSe‐ZnS strained‐layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkyls. Applied Physics Letters, 49 (25). 1702-1704 doi:10.1063/1.97220
Yodo, Tokuo, Koyama, Tadashi, Yamashita, Ken (1988) High‐quality epitaxial growth of ZnSe on (100) ZnSe by atmospheric pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 64 (5). 2403-2407 doi:10.1063/1.341673
Hahn, B., Preis, H., Blümel, S., Gebhardt, W. (1998) Hydrogen effusion from epitaxial ZnSe layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 73 (11). 1556-1558 doi:10.1063/1.122203
Woodall, J. M., Hodgson, R. T., Gunshor, R. L. (1991) Low‐resistivityp‐type ZnSe through surface Fermi level engineering. Applied Physics Letters, 58 (4). 379-381 doi:10.1063/1.104640
 
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