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Humer‐Hager, T., Zwicknagl, P. (1988) Influence of oxygen implantation on the carrier concentration profile inp‐GaAs. Applied Physics Letters, 52 (1). 63-64 doi:10.1063/1.99319

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of oxygen implantation on the carrier concentration profile inp‐GaAs
JournalApplied Physics Letters
AuthorsHumer‐Hager, T.Author
Zwicknagl, P.Author
Year1988 (January 4)Volume52
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.99319Search in ResearchGate
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Mindat Ref. ID8482387Long-form Identifiermindat:1:5:8482387:6
GUID0
Full ReferenceHumer‐Hager, T., Zwicknagl, P. (1988) Influence of oxygen implantation on the carrier concentration profile inp‐GaAs. Applied Physics Letters, 52 (1). 63-64 doi:10.1063/1.99319
Plain TextHumer‐Hager, T., Zwicknagl, P. (1988) Influence of oxygen implantation on the carrier concentration profile inp‐GaAs. Applied Physics Letters, 52 (1). 63-64 doi:10.1063/1.99319
In(1988, January) Applied Physics Letters Vol. 52 (1) AIP Publishing

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Humer‐Hager, T., Treichler, R., Wurzinger, P., Tews, H., Zwicknagl, P. (1989) Implantation‐induced diffusion of Zn and Be in GaAs/AlGaAs heterostructures. Journal of Applied Physics, 66 (1). 181-186 doi:10.1063/1.343901
Humer-Hager, T., Zwicknagl, P. (1988) Annealing Behavior of Be- and Mg-Implants in GaAs. Japanese Journal of Applied Physics, 27. 428-433 doi:10.1143/jjap.27.428
Adachi, Sadao (1988) Si‐ion implantation in GaAs and AlxGa1−xAs. Journal of Applied Physics, 63 (1). 64-67 doi:10.1063/1.341157
Humer‐Hager, T., Asenov, A. (1991) Photoluminescence in GaAs/AlGaAs heterojunction bipolar transistors: Dependence of signal strength on excitation density. Journal of Applied Physics, 69 (3). 1583-1590 doi:10.1063/1.347253
Werner, A., Kunst, M., Moustakas, T. D. (1990) Influence of the impurity concentration on charge carrier dynamics in GaAs films. Applied Physics Letters, 56 (16). 1558-1560 doi:10.1063/1.103152
Humer‐Hager, T., Tews, H. (1990) Photoluminescence in GaAs/AlGaAs heterojunction bipolar transistors: An investigation of the properties of the Mg acceptor. Journal of Applied Physics, 68 (3). 1310-1317 doi:10.1063/1.346700
Davey, S. T., Davis, J. R., Reeson, K. J., Hemment, P. L. F. (1988) Photoluminescence studies of silicon‐on‐insulator substrates formed by oxygen implantation. Applied Physics Letters, 52 (6). 465-467 doi:10.1063/1.99445
Tews, H., Neumann, R., Humer‐Hager, T., Treichler, R. (1990) Abrupt Mg doping in thin graded base GaAs/GaAlAs heterojunction bipolar transistors. Journal of Applied Physics, 68 (3). 1318-1323 doi:10.1063/1.346701
Suski, T., Litwin‐Staszewska, E., Wiśniewski, P., Dmowski, L., Zhuang, W. H., Liang, G. B., Sun, D. Z., Zhen, Y. P. (1988) Metastable carrier concentration in GaAs/GaAlAs heterostructure under hydrostatic pressure. Journal of Applied Physics, 63 (7). 2307-2310 doi:10.1063/1.341134
Höpfel, R. A. (1988) Extremely high negative photoconductivity inp‐modulation‐doped GaAs quantum wells. Applied Physics Letters, 52 (10). 801-803 doi:10.1063/1.99288
Ahrenkiel, R. K., Dunlavy, D. J., Hanak, T. (1988) Minority‐carrier lifetime in ITO/InP heterojunctions. Journal of Applied Physics, 64 (4). 1916-1921 doi:10.1063/1.341743
 
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