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Miles, R. H., McGill, T. C., Chow, P. P., Johnson, D. C., Hauenstein, R. J., Nieh, C. W., Strathman, M. D. (1988) Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices. Applied Physics Letters, 52 (11). 916-918 doi:10.1063/1.99272

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Reference TypeJournal (article/letter/editorial)
TitleDependence of critical thickness on growth temperature in GexSi1−x/Si superlattices
JournalApplied Physics Letters
AuthorsMiles, R. H.Author
McGill, T. C.Author
Chow, P. P.Author
Johnson, D. C.Author
Hauenstein, R. J.Author
Nieh, C. W.Author
Strathman, M. D.Author
Year1988 (March 14)Volume52
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.99272Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482523Long-form Identifiermindat:1:5:8482523:6
GUID0
Full ReferenceMiles, R. H., McGill, T. C., Chow, P. P., Johnson, D. C., Hauenstein, R. J., Nieh, C. W., Strathman, M. D. (1988) Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices. Applied Physics Letters, 52 (11). 916-918 doi:10.1063/1.99272
Plain TextMiles, R. H., McGill, T. C., Chow, P. P., Johnson, D. C., Hauenstein, R. J., Nieh, C. W., Strathman, M. D. (1988) Dependence of critical thickness on growth temperature in GexSi1−x/Si superlattices. Applied Physics Letters, 52 (11). 916-918 doi:10.1063/1.99272
In(1988, March) Applied Physics Letters Vol. 52 (11) AIP Publishing

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Chow, D. H., Miles, R. H., Söderström, J. R., McGill, T. C. (1990) Growth and characterization of InAs/Ga1−xInxSb strained‐layer superlattices. Applied Physics Letters, 56 (15). 1418-1420 doi:10.1063/1.102486
Chow, D. H., McGill, T. C., Sou, I. K., Faurie, J. P., Nieh, C. W. (1988) Observation of negative differential resistance from a single barrier heterostructure. Applied Physics Letters, 52 (1). 54-56 doi:10.1063/1.99316
Miles, R. H., Chow, D. H., Schulman, J. N., McGill, T. C. (1990) Infrared optical characterization of InAs/Ga1−xInxSb superlattices. Applied Physics Letters, 57 (8). 801-803 doi:10.1063/1.103425
Jackson, M. K., Johnson, M. B., Chow, D. H., McGill, T. C., Nieh, C. W. (1989) Electron tunneling time measured by photoluminescence excitation correlation spectroscopy. Applied Physics Letters, 54 (6). 552-554 doi:10.1063/1.100928
Croke, E. T., Hauenstein, R. J., McGill, T. C. (1988) Growth of superconducting V3Si on Si by molecular beam epitaxial techniques. Applied Physics Letters, 53 (6). 514-516 doi:10.1063/1.100621
Miles, R. H., Wu, G. Y., Johnson, M. B., McGill, T. C., Faurie, J. P., Sivananthan, S. (1986) Photoluminescence studies of ZnTe‐CdTe strained‐layer superlattices. Applied Physics Letters, 48 (20). 1383-1385 doi:10.1063/1.96916
Tanner, B. K., Parbrook, P. J., Whitehouse, C. R., Keir, A. M., Johnson, A. D., Jones, J., Wallis, D., Smith, L. M., Lunn, B., Hogg, J. H. C. (2000) Dependence of the critical thickness on Si doping of InGaAs on GaAs. Applied Physics Letters, 77 (14). 2156-2158 doi:10.1063/1.1315342
Jackson, M. K., Miles, R. H., McGill, T. C., Faurie, J. P. (1989) Raman scattering determination of strain in CdTe/ZnTe superlattices. Applied Physics Letters, 55 (8). 786-788 doi:10.1063/1.101781
Youngdale, E. R., Meyer, J. R., Hoffman, C. A., Bartoli, F. J., Grein, C. H., Young, P. M., Ehrenreich, H., Miles, R. H., Chow, D. H. (1994) Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices. Applied Physics Letters, 64 (23). 3160-3162 doi:10.1063/1.111325
Croke, E. T., McGill, T. C., Hauenstein, R. J., Miles, R. H. (1990) Evidence of segregation in (100) strained Si1−xGexalloys grown at low temperature by molecular beam epitaxy. Applied Physics Letters, 56 (4). 367-369 doi:10.1063/1.102787
Hull, R., Bean, J. C., Werder, D. J., Leibenguth, R. E. (1988) Insituobservations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures. Applied Physics Letters, 52 (19). 1605-1607 doi:10.1063/1.99055
 
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