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Yap, D., Liau, Z. L., Tsang, D. Z., Walpole, J. N. (1988) High‐performance InGaAsP/InP buried‐heterostructure lasers and arrays defined by ion‐beam‐assisted etching. Applied Physics Letters, 52 (18). 1464-1466 doi:10.1063/1.99099

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐performance InGaAsP/InP buried‐heterostructure lasers and arrays defined by ion‐beam‐assisted etching
JournalApplied Physics Letters
AuthorsYap, D.Author
Liau, Z. L.Author
Tsang, D. Z.Author
Walpole, J. N.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99099Search in ResearchGate
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Mindat Ref. ID8482903Long-form Identifiermindat:1:5:8482903:8
GUID0
Full ReferenceYap, D., Liau, Z. L., Tsang, D. Z., Walpole, J. N. (1988) High‐performance InGaAsP/InP buried‐heterostructure lasers and arrays defined by ion‐beam‐assisted etching. Applied Physics Letters, 52 (18). 1464-1466 doi:10.1063/1.99099
Plain TextYap, D., Liau, Z. L., Tsang, D. Z., Walpole, J. N. (1988) High‐performance InGaAsP/InP buried‐heterostructure lasers and arrays defined by ion‐beam‐assisted etching. Applied Physics Letters, 52 (18). 1464-1466 doi:10.1063/1.99099
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Yap, D., Walpole, J. N., Liau, Z. L. (1988) InGaAsP/InP buried‐heterostructure lasers with concurrent fabrication of the stripes and mirrors. Applied Physics Letters, 53 (14). 1260-1262 doi:10.1063/1.99995
Yap, D., Walpole, J. N., Liau, Z. L. (1989) Novel scalloped‐mirror diffraction‐coupled InGaAsP/InP buried‐heterostructure laser arrays. Applied Physics Letters, 54 (8). 687-689 doi:10.1063/1.100864
Liau, Z. L., Walpole, J. N., Tsang, D. Z. (1984) Low threshold GaInAsP/InP buried‐heterostructure lasers with a chemically etched and mass‐transported mirror. Applied Physics Letters, 44 (10). 945-947 doi:10.1063/1.94606
Tsang, D. Z., Walpole, J. N., Liau, Z. L., Groves, S. H., Diadiuk, V. (1984) Qswitching of low‐threshold buried‐heterostructure diode lasers at 10 GHz. Applied Physics Letters, 45 (3). 204-206 doi:10.1063/1.95183
Kuznetsov, M., Tsang, D. Z., Walpole, J. N., Liau, Z. L., Ippen, E. P. (1987) Multistable mode locking of InGaAsP semiconductor lasers. Applied Physics Letters, 51 (12). 895-897 doi:10.1063/1.98847
Walpole, J. N., Liau, Z. L., Missaggia, L. J., Yap, D. (1987) Diode lasers with cylindrical mirror facets and reduced beam divergence. Applied Physics Letters, 50 (18). 1219-1221 doi:10.1063/1.97914
Liau, Z. L., Walpole, J. N. (1982) A novel technique for GaInAsP/InP buried heterostructure laser fabrication. Applied Physics Letters, 40 (7). 568-570 doi:10.1063/1.93182
Walpole, J. N., Liau, Z. L. (1986) Monolithic two‐dimensional arrays of high‐power GaInAsP/InP surface‐emitting diode lasers. Applied Physics Letters, 48 (24). 1636-1638 doi:10.1063/1.97025
Liau, Z. L., Diadiuk, V., Walpole, J. N., Mull, D. E. (1988) Large‐numerical‐aperture InP lenslets by mass transport. Applied Physics Letters, 52 (22). 1859-1861 doi:10.1063/1.99607
Liau, Z. L., Walpole, J. N., Missaggia, L. J., Mull, D. E. (1990) GaInAsP/InP buried‐heterostructure surface‐emitting diode laser with monolithic integrated bifocal microlens. Applied Physics Letters, 56 (13). 1219-1221 doi:10.1063/1.102520
Liau, Z. L., Walpole, J. N. (1987) Large monolithic two‐dimensional arrays of GaInAsP/InP surface‐emitting lasers. Applied Physics Letters, 50 (9). 528-530 doi:10.1063/1.98148
 
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