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Franciosi, A., Raisanen, A., Wall, A., Chang, S., Philip, P., Troullier, N., Peterman, D. J. (1988) Ytterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions. Applied Physics Letters, 52 (18). 1490-1492 doi:10.1063/1.99108

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Reference TypeJournal (article/letter/editorial)
TitleYtterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions
JournalApplied Physics Letters
AuthorsFranciosi, A.Author
Raisanen, A.Author
Wall, A.Author
Chang, S.Author
Philip, P.Author
Troullier, N.Author
Peterman, D. J.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99108Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482922Long-form Identifiermindat:1:5:8482922:3
GUID0
Full ReferenceFranciosi, A., Raisanen, A., Wall, A., Chang, S., Philip, P., Troullier, N., Peterman, D. J. (1988) Ytterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions. Applied Physics Letters, 52 (18). 1490-1492 doi:10.1063/1.99108
Plain TextFranciosi, A., Raisanen, A., Wall, A., Chang, S., Philip, P., Troullier, N., Peterman, D. J. (1988) Ytterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions. Applied Physics Letters, 52 (18). 1490-1492 doi:10.1063/1.99108
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Franciosi, A., Philip, P., Chang, S., Wall, A., Raisanen, A., Troullier, N., Soukiassian, P. (1987) Electronic promoters and semiconductor oxidation: Alkali metals on Si(111) surfaces. Physical Review B, 35 (2) 910-913 doi:10.1103/physrevb.35.910
Chang, S., Philip, P., Wall, A., Raisanen, A., Troullier, N., Franciosi, A. (1987) Low-electronegativity overlayers and enhanced semiconductor oxidation: Sm on Si(111) and GaAs(110) surfaces. Physical Review B, 35 (6) 3013-3016 doi:10.1103/physrevb.35.3013
Raisanen, A., Haugstad, G., Yu, X., Franciosi, A. (1992) Gd and Sm interfaces with Hg1−xCdxTe(110) and a general model of rare‐earth/Hg1−xCdxTe(110) interface formation. Journal of Applied Physics, 72 (3). 1104-1112 doi:10.1063/1.351787
Raisanen, A., Haugstad, G., Yu, X., Franciosi, A. (1991) Reaction and growth of Yb/Hg1−xCdxTe(110) interfaces. Journal of Applied Physics, 70 (6). 3115-3126 doi:10.1063/1.349290
Raisanen, A. D., Brillson, L. J., Vanzetti, L., Bonanni, A., Franciosi, A. (1995) Atomic diffusion‐induced deep levels near ZnSe/GaAs(100) interfaces. Applied Physics Letters, 66 (24). 3301-3303 doi:10.1063/1.113737
Peterman, D. J., Franciosi, A. (1984) HgCdTe‐Cr interface chemistry. Applied Physics Letters, 45 (12). 1305-1306 doi:10.1063/1.95128
Franciosi, A., Philip, P., Peterman, D. J. (1985) Interface chemistry of ternary semiconductors: Local morphology of theHg1−xCdxTe(110)-Cr interface. Physical Review B, 32 (12) 8100-8107 doi:10.1103/physrevb.32.8100
Sorba, L., Pedio, M., Nannarone, S., Chang, S., Raisanen, A., Wall, A., Philip, P., Franciosi, A. (1990) High-resolution photoemission study of the interaction of hydrogen with GaAs(110) surfaces. Physical Review B, 41 (2) 1100-1110 doi:10.1103/physrevb.41.1100
Lange, M. D., Sivananthan, S., Chu, X., Faurie, J. P. (1988) Molecular beam epitaxial growth and characterization of 2‐in.‐diam Hg1−xCdxTe films on GaAs (100) substrates. Applied Physics Letters, 52 (12). 978-980 doi:10.1063/1.99247
Yu, Xiaohua, Raisanen, A., Haugstad, G., Ceccone, G., Troullier, N., Franciosi, A. (1990) Low-temperature photoemission measurements of valence-band discontinuities at buried heterojunctions. Physical Review B, 42 (3) 1872-1875 doi:10.1103/physrevb.42.1872
Arias, J. M., Shin, S. H., Pasko, J. G., Gertner, E. R. (1988) Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy. Applied Physics Letters, 52 (1). 39-41 doi:10.1063/1.99310
 
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