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LaBrec, C. R., Udo, M. K., Ramdas, A. K. (1988) Very shallow acceptors in neutron transmutation doped silicon. Applied Physics Letters, 52 (18). 1505-1507 doi:10.1063/1.99113

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Reference TypeJournal (article/letter/editorial)
TitleVery shallow acceptors in neutron transmutation doped silicon
JournalApplied Physics Letters
AuthorsLaBrec, C. R.Author
Udo, M. K.Author
Ramdas, A. K.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99113Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482932Long-form Identifiermindat:1:5:8482932:0
GUID0
Full ReferenceLaBrec, C. R., Udo, M. K., Ramdas, A. K. (1988) Very shallow acceptors in neutron transmutation doped silicon. Applied Physics Letters, 52 (18). 1505-1507 doi:10.1063/1.99113
Plain TextLaBrec, C. R., Udo, M. K., Ramdas, A. K. (1988) Very shallow acceptors in neutron transmutation doped silicon. Applied Physics Letters, 52 (18). 1505-1507 doi:10.1063/1.99113
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

See Also

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Udo, M. K., LaBrec, C. R., Ramdas, A. K. (1991) Ultrashallow acceptors in neutron-transmutation-doped silicon. Physical Review B, 44 (4) 1565-1578 doi:10.1103/physrevb.44.1565
Cross, J. W., LaBrec, C. R., Rodriguez, S., Ramdas, A. K., Haller, E. E. (1985) Piezospectroscopic study of Be double acceptors in Ge. Physical Review B, 32 (12) 7992-8001 doi:10.1103/physrevb.32.7992
van Ruyven, L. J., Ammerlaan, C. A. J. (1979) Electron trapping in neutron transmutation doped silicon. Applied Physics Letters, 34 (10). 632-634 doi:10.1063/1.90643
Guldberg, J. (1977) Electron trap annealing in neutron transmutation doped silicon. Applied Physics Letters, 31 (9). 578-579 doi:10.1063/1.89785
Sahu, K., Abha, , Reddy, T. Rs., Warrier, A. V. R. (1983) Radiation damage in neutron transmutationā€doped silicon. II. Infrared study. Journal of Applied Physics, 54 (2). 710-714 doi:10.1063/1.332079
Kuriyama, K., Tokumasu, T., Takahashi, Jun, Kondo, H., Okada, M. (2002) Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN. Applied Physics Letters, 80 (18). 3328-3330 doi:10.1063/1.1477269
Corish, J., Beniere, F., Agrawal, V. K., Haridoss, S., Defeux, C. (1979) Lattice defects in silicon doped by neutron transmutation. Journal of Applied Physics, 50 (11). 6838-6844 doi:10.1063/1.325883
Kuriyama, K., Yokoyama, K., Satoh, Akemi (1991) Thermally stimulated current in neutronā€transmutationā€doped semiā€insulating GaAs. Applied Physics Letters, 59 (11). 1326-1328 doi:10.1063/1.105489
Jagannadham, K., Verghese, K., Butler, J. E. (2001) Neutron transmutation of 10B isotope-doped diamond. Applied Physics Letters, 78 (4). 446-447 doi:10.1063/1.1342207
Satoh, M., Kawahara, H., Kuriyama, K., Kawakubo, T., Yoneda, K., Kimura, I. (1988) Influence of photoexcitation on hopping conduction in neutronā€transmutationā€doped GaAs. Journal of Applied Physics, 63 (4). 1099-1103 doi:10.1063/1.340014
Hamanaka, H., Kuriyama, K., Yahagi, M., Satoh, M., Iwamura, K., Kim, C., Kim, Y., Shiraishi, F., Tsuji, K., Minomura, S. (1984) Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique. Applied Physics Letters, 45 (7). 786-788 doi:10.1063/1.95366
 
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