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Cody, N. W., Sudarsan, U., Solanki, R. (1988) Rapid thermal anneal of sprayed Y1Ba2Cu3O7−xslurry. Applied Physics Letters, 52 (18). 1531-1533 doi:10.1063/1.99699

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Reference TypeJournal (article/letter/editorial)
TitleRapid thermal anneal of sprayed Y1Ba2Cu3O7−xslurry
JournalApplied Physics Letters
AuthorsCody, N. W.Author
Sudarsan, U.Author
Solanki, R.Author
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99699Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482950Long-form Identifiermindat:1:5:8482950:6
GUID0
Full ReferenceCody, N. W., Sudarsan, U., Solanki, R. (1988) Rapid thermal anneal of sprayed Y1Ba2Cu3O7−xslurry. Applied Physics Letters, 52 (18). 1531-1533 doi:10.1063/1.99699
Plain TextCody, N. W., Sudarsan, U., Solanki, R. (1988) Rapid thermal anneal of sprayed Y1Ba2Cu3O7−xslurry. Applied Physics Letters, 52 (18). 1531-1533 doi:10.1063/1.99699
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

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Sudarsan, U., Cody, N. W., Dosluoglu, T., Solanki, R. (1989) Ultraviolet laser‐induced low‐temperature epitaxy of GaP. Applied Physics Letters, 55 (8). 738-740 doi:10.1063/1.101791
Solanki, R., Sudarsan, U., Johnson, J. C. (1988) Laser‐induced homoepitaxy of GaP. Applied Physics Letters, 52 (11). 919-921 doi:10.1063/1.99273
Cody, N. W., Sudarsan, U., Solanki, R. (1989) Low‐temperature cadmium telluride homoepitaxy at high growth rates. Journal of Applied Physics, 65 (5). 1932-1935 doi:10.1063/1.342880
Cody, N. W., Sudarsan, U., Solanki, R. (1989) Ultraviolet photon‐assisted heteroepitaxy of CdTe and Hg1−xCdxTe on GaAs/Si substrates. Journal of Applied Physics, 66 (1). 449-452 doi:10.1063/1.343847
Sudarsan, U., Cody, N. W., Solanki, R. (1989) Laser-induced selective etching of YBa2Cu3O7?x films. Journal of Materials Science Letters, 8 (5) 501-502 doi:10.1007/bf00720275
Sudarsan, U., Solanki, R. (1990) Formation of periodic structures during excimer laser‐assisted heteroepitaxy of GaP. Journal of Applied Physics, 67 (6). 2913-2918 doi:10.1063/1.345409
Sudarsan, U., Dosluoglu, T., Cody, N.W., Solanki, R. (1989) Selective heteroepitaxy of GaP on silicon. Journal of Crystal Growth, 94 (4). 978-980 doi:10.1016/0022-0248(89)90132-2
Lau, W. M., Sodhi, R. N. S., Ingrey, S. (1988) Thermal desorption of oxides on InP. Applied Physics Letters, 52 (5). 386-388 doi:10.1063/1.99474
Gupta, Arunava, Koren, Gad (1988) Direct laser writing of superconducting patterns of Y1Ba2Cu3O7−δ. Applied Physics Letters, 52 (8). 665-666 doi:10.1063/1.99368
Maier, M., Selders, J. (1986) Rapid thermal anneal and furnace anneal of beryllium‐implanted Ga0.47In0.53As. Journal of Applied Physics, 60 (8). 2783-2787 doi:10.1063/1.337058
Lysaght, Patrick S., Foran, Brendan, Bersuker, Gennadi, Chen, Peijun J., Murto, Robert W., Huff, Howard R. (2003) Physicochemical properties of HfO2 in response to rapid thermal anneal. Applied Physics Letters, 82 (8). 1266-1268 doi:10.1063/1.1553998
 
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