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Ishiguro, H., Kawabata, T., Koike, S. (1988) InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition. Applied Physics Letters, 52 (25). 2099-2101 doi:10.1063/1.99547

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Reference TypeJournal (article/letter/editorial)
TitleInGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsIshiguro, H.Author
Kawabata, T.Author
Koike, S.Author
Year1988 (June 20)Volume52
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.99547Search in ResearchGate
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Mindat Ref. ID8483399Long-form Identifiermindat:1:5:8483399:8
GUID0
Full ReferenceIshiguro, H., Kawabata, T., Koike, S. (1988) InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition. Applied Physics Letters, 52 (25). 2099-2101 doi:10.1063/1.99547
Plain TextIshiguro, H., Kawabata, T., Koike, S. (1988) InGaAsP multiple quantum well lasers with planar buried heterostructure prepared by metalorganic chemical vapor deposition. Applied Physics Letters, 52 (25). 2099-2101 doi:10.1063/1.99547
In(1988, June) Applied Physics Letters Vol. 52 (25) AIP Publishing

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Kawabata, T., Ishiguro, H., Koike, S. (1988) Metalorganic chemical vapor deposition of InGaAsP/InP layers and fabrication of 1.3‐Όm planar buried heterostructure lasers. Journal of Applied Physics, 64 (7). 3684-3688 doi:10.1063/1.341411
Ishiguro, H., Kawabata, T., Koike, S. (1987) Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three‐stage metalorganic chemical vapor deposition. Applied Physics Letters, 51 (12). 874-876 doi:10.1063/1.98840
Koyama, Fumio, Tomomatsu, Kazuhiko, Iga, Kenichi (1988) GaAs surface emitting lasers with circular buried heterostructure grown by metalorganic chemical vapor deposition and two‐dimensional laser array. Applied Physics Letters, 52 (7). 528-529 doi:10.1063/1.99405
York, P. K., Beernink, K. J., FernĂĄndez, G. E., Coleman, J. J. (1989) InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 ÎŒm) by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (6). 499-501 doi:10.1063/1.100935
Sanada, T., Nakai, K., Wakao, K., Kuno, M., Yamakoshi, S. (1987) Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (14). 1054-1056 doi:10.1063/1.98789
Sogawa, T., Ando, S., Kanbe, H. (1994) Growth of GaAs/AlAs trench‐buried multiple quantum wires by metalorganic chemical vapor deposition on V‐grooved substrates. Applied Physics Letters, 64 (24). 3299-3301 doi:10.1063/1.111972
Epler, J. E., Thornton, R. L., Paoli, T. L. (1988) Very low threshold buried heterostructure quantum well lasers by laser‐assisted disordering. Applied Physics Letters, 52 (17). 1371-1373 doi:10.1063/1.99119
Kawabata, Toshiharu, Matsuda, Toshio, Koike, Susumu (1984) GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition. Journal of Applied Physics, 56 (8). 2367-2368 doi:10.1063/1.334277
Ng, Willie, Hong, C. S., Manasevit, H., Dapkus, P. D. (1981) Low‐threshold 1.3‐Όm GaInAsP/InP buried heterostructure lasers by liquid phase epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 39 (3). 188-189 doi:10.1063/1.92697
Kawai, Hiroji, Matsuda, Osamu, Kaneko, Kunio (1983) High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l727
Welch, D. F., Cross, P. S., Scifres, D. R., Streifer, W., Burnham, R. D. (1986) Properties of AlGaAs buried heterostructure lasers and laser arrays grown by a two‐step metalorganic chemical vapor deposition. Applied Physics Letters, 48 (25). 1716-1718 doi:10.1063/1.97024
 
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