Vote for your favorite mineral in #MinCup25! - Calcite vs. Perovskite
This match of heavy hitters is bound to end in heartbreak as classic calcite faces off against futuristic perovskite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Selective growth condition in disilane gas source silicon molecular beam epitaxy. Applied Physics Letters, 52 (26). 2242-2243 doi:10.1063/1.99654

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleSelective growth condition in disilane gas source silicon molecular beam epitaxy
JournalApplied Physics Letters
AuthorsHirayama, HiroyukiAuthor
Tatsumi, ToruAuthor
Aizaki, NaoakiAuthor
Year1988 (June 27)Volume52
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.99654Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483503Long-form Identifiermindat:1:5:8483503:9
GUID0
Full ReferenceHirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Selective growth condition in disilane gas source silicon molecular beam epitaxy. Applied Physics Letters, 52 (26). 2242-2243 doi:10.1063/1.99654
Plain TextHirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Selective growth condition in disilane gas source silicon molecular beam epitaxy. Applied Physics Letters, 52 (26). 2242-2243 doi:10.1063/1.99654
In(1988, June) Applied Physics Letters Vol. 52 (26) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Gas source silicon molecular beam epitaxy using disilane. Applied Physics Letters, 52 (18). 1484-1486 doi:10.1063/1.99106
Hirayama, Hiroyuki, Tatsumi, Toru, Ogura, Atsushi, Aizaki, Naoaki (1987) Gas source silicon molecular beam epitaxy using silane. Applied Physics Letters, 51 (26). 2213-2215 doi:10.1063/1.99009
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1988) Stress reduction and doping efficiency in B‐ and Ge‐doped silicon molecular beam epitaxy films. Applied Physics Letters, 52 (16). 1335-1337 doi:10.1063/1.99151
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy. Applied Physics Letters, 52 (11). 895-897 doi:10.1063/1.99265
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1988) Surface Segregation at Boron Planar Doping in Silicon Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l954
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1987) Boron heavy doping for Si molecular beam epitaxy using a HBO2source. Applied Physics Letters, 50 (18). 1234-1236 doi:10.1063/1.97919
Tatsumi, Toru, Hirayama, Hiroyuki, Aizaki, Naoaki (1989) Si particle density reduction in Si molecular beam epitaxy using a deflection electrode. Applied Physics Letters, 54 (7). 629-631 doi:10.1063/1.100900
Hirayama, Hiroyuki, Tatsumi, Toru, Aizaki, Naoaki (1989) Disilane gas source Si-MBE. Journal of Crystal Growth, 95 (1). 476-479 doi:10.1016/0022-0248(89)90446-6
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Selective heteroepitaxial growth of Si1−xGexusing gas source molecular beam epitaxy. Applied Physics Letters, 56 (12). 1107-1109 doi:10.1063/1.102582
Hirayama, Hiroyuki, Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru (1990) Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy. Applied Physics Letters, 56 (26). 2645-2647 doi:10.1063/1.102863
Hiroi, Masayuki, Koyama, Kazuhisa, Tatsumi, Toru, Hirayama, Hiroyuki (1992) Intensity oscillations in reflection high‐energy electron diffraction during disilane gas source molecular beam epitaxy. Applied Physics Letters, 60 (14). 1723-1725 doi:10.1063/1.107197
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 4, 2025 19:44:19
Go to top of page