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Zahn, D. R. T., McLean, A. B., Williams, R. H., Esser, N., Richter, W. (1988) Transport measurements of Sb contacts to InP(110). Applied Physics Letters, 52 (9). 739-741 doi:10.1063/1.99341

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Reference TypeJournal (article/letter/editorial)
TitleTransport measurements of Sb contacts to InP(110)
JournalApplied Physics Letters
AuthorsZahn, D. R. T.Author
McLean, A. B.Author
Williams, R. H.Author
Esser, N.Author
Richter, W.Author
Year1988 (February 29)Volume52
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99341Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483896Long-form Identifiermindat:1:5:8483896:6
GUID0
Full ReferenceZahn, D. R. T., McLean, A. B., Williams, R. H., Esser, N., Richter, W. (1988) Transport measurements of Sb contacts to InP(110). Applied Physics Letters, 52 (9). 739-741 doi:10.1063/1.99341
Plain TextZahn, D. R. T., McLean, A. B., Williams, R. H., Esser, N., Richter, W. (1988) Transport measurements of Sb contacts to InP(110). Applied Physics Letters, 52 (9). 739-741 doi:10.1063/1.99341
In(1988, February) Applied Physics Letters Vol. 52 (9) AIP Publishing

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Zahn, D R T, Esser, N, Richter, W, Stephens, C, Williams, R H (1989) Bismuth and antimony on InP(110): a comparison. Journal of Physics: Condensed Matter, 1. doi:10.1088/0953-8984/1/sb/009
Zahn, D.R.T., Richter, W., McLean, A.B., Williams, R.H., Stephens, C., McGovern, I.T., Cimino, R., Braun, W., Esser, N. (1990) Temperature effects on the formation of the Sb/InP(110) interface. Applied Surface Science, 41. 179-183 doi:10.1016/0169-4332(89)90053-6
Pletschen, W., Esser, N., Münder, H., Zahn, D., Geurts, J., Richter, W. (1986) Sb overlayers on GaAs(110). Surface Science Letters, 178 (1). doi:10.1016/0167-2584(86)90137-4
Zahn, D., Esser, N., Pletschen, W., Geurts, J., Richter, W. (1986) The InP/Sb interface studied by Raman scattering. Surface Science Letters, 168 (1). doi:10.1016/0167-2584(86)90505-0
Wagner, V., Drews, D., Esser, N., Zahn, D. R. T., Geurts, J., Richter, W. (1994) Raman monitoring of semiconductor growth. Journal of Applied Physics, 75 (11). 7330-7333 doi:10.1063/1.356644
Pletschen, W., Esser, N., Münder, H., Zahn, D., Geurts, J., Richter, W. (1986) Sb overlayers on GaAs(110). Surface Science, 178 (1). 140-148 doi:10.1016/0039-6028(86)90289-x
Zahn, D. R. T., Williams, R. H., Golding, T. D., Dinan, J. H., Mackey, K. J., Geurts, J., Richter, W. (1988) Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth. Applied Physics Letters, 53 (24). 2409-2410 doi:10.1063/1.100245
Morley, S., Zahn, D. R. T., Eickhoff, T., Richter, W., Woolf, D. A., Westwood, D. I., Williams, R. H. (1992) Far‐infrared measurements of the mobility and carrier concentration in lightly doped GaAs on Si(100). Journal of Applied Physics, 72 (2). 631-637 doi:10.1063/1.351845
Zahn, D., Esser, N., Pletschen, W., Geurts, J., Richter, W. (1986) The InP/Sb interface studied by raman scattering. Surface Science, 168 (1). 823-829 doi:10.1016/0039-6028(86)90915-5
Resch, U., Esser, N., Richter, W. (1991) Growth mode of Bi and Sb layers on GaAs(110) and InP(110). Surface Science Letters, 251. doi:10.1016/0167-2584(91)90939-o
Zahn, D. R. T., Mackey, K. J., Williams, R. H., Münder, H., Geurts, J., Richter, W. (1987) Formation of interfacial layers in InSb‐CdTe heterostructures studied by Raman scattering. Applied Physics Letters, 50 (12). 742-744 doi:10.1063/1.98085
 
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