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La Ferla, A., Rimini, E., Ferla, G. (1988) Ion‐induced epitaxial growth of chemical vapor deposited Si layers. Applied Physics Letters, 52 (9). 712-714 doi:10.1063/1.99355

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Reference TypeJournal (article/letter/editorial)
TitleIon‐induced epitaxial growth of chemical vapor deposited Si layers
JournalApplied Physics Letters
AuthorsLa Ferla, A.Author
Rimini, E.Author
Ferla, G.Author
Year1988 (February 29)Volume52
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99355Search in ResearchGate
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Mindat Ref. ID8483920Long-form Identifiermindat:1:5:8483920:2
GUID0
Full ReferenceLa Ferla, A., Rimini, E., Ferla, G. (1988) Ion‐induced epitaxial growth of chemical vapor deposited Si layers. Applied Physics Letters, 52 (9). 712-714 doi:10.1063/1.99355
Plain TextLa Ferla, A., Rimini, E., Ferla, G. (1988) Ion‐induced epitaxial growth of chemical vapor deposited Si layers. Applied Physics Letters, 52 (9). 712-714 doi:10.1063/1.99355
In(1988, February) Applied Physics Letters Vol. 52 (9) AIP Publishing

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Priolo, F., La Ferla, A., Spinella, C., Rimini, E., Ferla, G., Baroetto, F., Licciardello, A. (1988) Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited Si. Applied Physics Letters, 53 (26). 2605-2607 doi:10.1063/1.100538
La Ferla, A., Priolo, F., Spinella, C., Rimini, E., Baroetto, F., Ferla, G. (1989) Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 311-317 doi:10.1016/0168-583x(89)90794-5
Cannavó, S., La Ferla, A., Rimini, E., Ferla, G., Gandolfi, L. (1986) Ion beam annealing during high current density implants of phosphorus into silicon. Journal of Applied Physics, 59 (12). 4038-4042 doi:10.1063/1.337038
La Ferla, A., Galvagno, G., Giri, P. K., Franzò, G., Rimini, E., Raineri, V., Gasparotto, A., Cali, D. (2000) Oxidation induced precipitation in Al implanted epitaxial silicon. Journal of Applied Physics, 88 (7). 3988pp. doi:10.1063/1.1309049
La Ferla, A., Torrisi, L., Galvagno, G., Rimini, E., Ciavola, G., Carnera, A., Gasparotto, A. (1993) Al‐O complex formation in ion implanted Czochralski and floating‐zone Si substrates. Applied Physics Letters, 62 (4). 393-395 doi:10.1063/1.108967
Priolo, F., Spinella, C., La Ferla, A., Rimini, E., Ferla, G. (1989) Ion-assisted recrystallization of amorphous silicon. Applied Surface Science, 43. 178-186 doi:10.1016/0169-4332(89)90208-0
Battaglia, Anna, Priolo, Francesco, Rimini, Emanuele, Ferla, Giuseppe (1990) Ion‐induced annealing and amorphization of isolated damage clusters in Si. Applied Physics Letters, 56 (26). 2622-2624 doi:10.1063/1.102856
Benyaïch, F., Rimini, E., Spinella, C., Cacciato, A., Fallico, G., Ferla, G., Ward, P. (1993) Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates. Applied Physics Letters, 62 (16). 1895-1897 doi:10.1063/1.109535
Priolo, F., La Ferla, A., Spinella, C., Rimini, E., Campisano, S.U., Ferla, G. (1990) Crystal-amorphous-silicon interface kinetics under ion beam irradiation. Applied Surface Science, 41. 619-626 doi:10.1016/0169-4332(89)90132-3
Cannavò, S., Grimaldi, M. G., Rimini, E., Ferla, G., Gandolfi, L. (1985) Ion beam and temperature annealing during high dose implants. Applied Physics Letters, 47 (2). 138-140 doi:10.1063/1.96240
Giri, P. K., Coffa, S., Raineri, V., Privitera, V., Galvagno, G., La Ferla, A., Rimini, E. (2001) Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon. Journal of Applied Physics, 89 (8). 4310-4317 doi:10.1063/1.1357464
 
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