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Yu, E. T., McGill, T. C. (1988) III‐V/II‐VI double‐barrier resonant tunneling structures. Applied Physics Letters, 53 (1). 60-62 doi:10.1063/1.100125

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Reference TypeJournal (article/letter/editorial)
TitleIII‐V/II‐VI double‐barrier resonant tunneling structures
JournalApplied Physics Letters
AuthorsYu, E. T.Author
McGill, T. C.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100125Search in ResearchGate
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Mindat Ref. ID8483973Long-form Identifiermindat:1:5:8483973:4
GUID0
Full ReferenceYu, E. T., McGill, T. C. (1988) III‐V/II‐VI double‐barrier resonant tunneling structures. Applied Physics Letters, 53 (1). 60-62 doi:10.1063/1.100125
Plain TextYu, E. T., McGill, T. C. (1988) III‐V/II‐VI double‐barrier resonant tunneling structures. Applied Physics Letters, 53 (1). 60-62 doi:10.1063/1.100125
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Yu, E. T., Jackson, M. K., McGill, T. C. (1989) Hole tunneling times in GaAs/AlAs double‐barrier structures. Applied Physics Letters, 55 (8). 744-746 doi:10.1063/1.101793
Tober, R. L., Pamulapati, J., Oh, J. E., Bhattacharya, P. K. (1988) Piezoreflectance characterization of double‐barrier resonant tunneling structures. Applied Physics Letters, 53 (10). 883-885 doi:10.1063/1.100103
Zaslavsky, A., Goldman, V. J., Tsui, D. C., Cunningham, J. E. (1988) Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures. Applied Physics Letters, 53 (15). 1408-1410 doi:10.1063/1.99956
Goldman, V. J., Tsui, D. C., Cunningham, J. E., Tsang, W. T. (1987) Transport in double‐barrier resonant tunneling structures. Journal of Applied Physics, 61 (7). 2693-2695 doi:10.1063/1.337909
Wang, T. H., Mei, X. B., Jiang, C., Huang, Y., Zhou, J. M., Yang, G. Z. (1993) Study of characteristics of photoluminescence spectra in double‐barrier resonant tunneling structures. Applied Physics Letters, 62 (10). 1149-1151 doi:10.1063/1.108771
Ting, D. Z.‐Y., Kirby, S. K., McGill, T. C. (1994) Interface roughness effects in resonant tunneling structures. Applied Physics Letters, 64 (15). 2004-2006 doi:10.1063/1.111720
Rüth, M., Slobodskyy, T., Gould, C., Schmidt, G., Molenkamp, L. W. (2008) Fermi edge singularity in II–VI semiconductor resonant tunneling structures. Applied Physics Letters, 93 (18). 182104pp. doi:10.1063/1.3009284
Weil, T., Vinter, B. (1987) Equivalence between resonant tunneling and sequential tunneling in double‐barrier diodes. Applied Physics Letters, 50 (18). 1281-1283 doi:10.1063/1.97884
Luo, L. F., Beresford, R., Wang, W. I. (1988) Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures. Applied Physics Letters, 53 (23). 2320-2322 doi:10.1063/1.100266
Söderström, J. R., Yao, J. Y., Andersson, T. G. (1991) Observation of resonant tunneling in InSb/AlInSb double‐barrier structures. Applied Physics Letters, 58 (7). 708-710 doi:10.1063/1.104522
Sheard, F. W., Toombs, G. A. (1988) Space‐charge buildup and bistability in resonant‐tunneling double‐barrier structures. Applied Physics Letters, 52 (15). 1228-1230 doi:10.1063/1.99165
 
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