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Krause, S. J., Jung, C. O., Wilson, S. R. (1988) Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material. Applied Physics Letters, 53 (1). 63-65 doi:10.1063/1.100568

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Reference TypeJournal (article/letter/editorial)
TitleStructure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material
JournalApplied Physics Letters
AuthorsKrause, S. J.Author
Jung, C. O.Author
Wilson, S. R.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100568Search in ResearchGate
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Mindat Ref. ID8483988Long-form Identifiermindat:1:5:8483988:6
GUID0
Full ReferenceKrause, S. J., Jung, C. O., Wilson, S. R. (1988) Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material. Applied Physics Letters, 53 (1). 63-65 doi:10.1063/1.100568
Plain TextKrause, S. J., Jung, C. O., Wilson, S. R. (1988) Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material. Applied Physics Letters, 53 (1). 63-65 doi:10.1063/1.100568
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Bagchi, S., Krause, S. J., Roitman, P. (1997) Dose dependence of microstructural development of buried oxide in oxygen implanted silicon-on-insulator material. Applied Physics Letters, 71 (15). 2136-2138 doi:10.1063/1.119360
Lee, J. D., Park, J. C., Venables, D., Krause, S. J., Roitman, P. (1993) Stacking fault pyramid formation and energetics in silicon‐on‐insulator material formed by multiple cycles of oxygen implantation and annealing. Applied Physics Letters, 63 (24). 3330-3332 doi:10.1063/1.110191
Visitserngtrakul, Supapan, Krause, Stephen J., Cordts, Bernhard F. (1991) Formation of multiply faulted defects in oxygen implanted silicon‐on‐insulator material. Journal of Applied Physics, 69 (3). 1784-1786 doi:10.1063/1.347232
Pennycook, S. J., Narayan, J., Holland, O. W. (1983) Formation of partially coherent antimony precipitates in ion implanted thermally annealed silicon. Journal of Applied Physics, 54 (12). 6875-6878 doi:10.1063/1.331992
Golanski, A., Perio, A., Grob, J. J., Stuck, R., Maillet, S., Clavelier, E. (1986) Influence of oxygen implantation conditions on the properties of a high‐temperature‐annealed silicon‐on‐insulator material. Applied Physics Letters, 49 (21). 1423-1425 doi:10.1063/1.97342
Seraphin, Supapan, Krause, Stephen J., Roitman, Peter, Simons, David S., Cordts, Bernhard F. (1991) Effect of annealing ambient on the removal of oxide precipitates in high‐dose oxygen implanted silicon. Applied Physics Letters, 59 (23). 3003-3005 doi:10.1063/1.105825
Kalish, R., Sedgwick, T. O., Mader, S., Shatas, S. (1984) Transient enhanced diffusion in arsenic‐implanted short time annealed silicon. Applied Physics Letters, 44 (1). 107-109 doi:10.1063/1.94572
Wilson, R. G. (1986) Depth distributions of hydrogen‐implanted and annealed silicon. Applied Physics Letters, 49 (20). 1375-1377 doi:10.1063/1.97329
Krause, S. J., Wilson, S. R., Paulson, W. M., Gregory, R. B. (1984) Grain growth during transient annealing of As‐implanted polycrystalline silicon films. Applied Physics Letters, 45 (7). 778-780 doi:10.1063/1.95401
Kung, Chung Yuan (1989) Effect of thermal history on oxygen precipitates in Czochralski silicon annealed at 1050 °C. Journal of Applied Physics, 65 (12). 4654-4665 doi:10.1063/1.343240
Gregory, R. B., Wetteroth, T. A., Wilson, S. R., Holland, O. W., Thomas, D. K. (1999) Effects of irradiation temperature and dose on exfoliation of H+-implanted silicon carbide. Applied Physics Letters, 75 (17). 2623-2625 doi:10.1063/1.125098
 
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