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Uedono, A., Tanigawa, S., Sugiura, J., Ogasawara, M. (1988) Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam. Applied Physics Letters, 53 (1). 25-27 doi:10.1063/1.100569

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Reference TypeJournal (article/letter/editorial)
TitleDepth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam
JournalApplied Physics Letters
AuthorsUedono, A.Author
Tanigawa, S.Author
Sugiura, J.Author
Ogasawara, M.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100569Search in ResearchGate
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Mindat Ref. ID8483991Long-form Identifiermindat:1:5:8483991:0
GUID0
Full ReferenceUedono, A., Tanigawa, S., Sugiura, J., Ogasawara, M. (1988) Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam. Applied Physics Letters, 53 (1). 25-27 doi:10.1063/1.100569
Plain TextUedono, A., Tanigawa, S., Sugiura, J., Ogasawara, M. (1988) Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2overlayer by a variable‐energy positron beam. Applied Physics Letters, 53 (1). 25-27 doi:10.1063/1.100569
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Uedono, Akira, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto (1989) A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron Beam. Japanese Journal of Applied Physics, 28. 1293-1297 doi:10.1143/jjap.28.1293
Uedono, Akira, Wei, Long, Tabuki, Y., Kondo, H., Tanigawa, Shoichiro, Sugiura, J., Ogasawara, Minoru (1992) Vacancy-Type Defects in Si+- and B+-Implanted Si Probed by a Monoenergetic Positron Beam. Materials Science Forum, 105. 1479-1482 doi:10.4028/www.scientific.net/msf.105-110.1479
Uedono, A., Tanigawa, S., Suzuki, K., Watanabe, K. (1988) Variable‐energy positron‐beam studies of SiO2/Si irradiated by ionizing radiation. Applied Physics Letters, 53 (6). 473-475 doi:10.1063/1.100616
Lee, Jong‐Lam, Kim, Jin Sup, Park, Hyung Moo, Ma, Dong Sung, Tanigawa, S., Uedono, A. (1988) Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron. Applied Physics Letters, 53 (14). 1302-1304 doi:10.1063/1.100003
Uedono, Akira, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto (1990) Vacancy-Type Defects in As+-Implanted SiO2(43 nm)/Si Proved with Slow Positrons. Japanese Journal of Applied Physics, 29. 1867-1872 doi:10.1143/jjap.29.1867
Uedono, Akira, Wei, Long, Dosho, Chisei, Kondo, Hitoshi, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto (1991) Defect Production in Phosphorus Ion-Implanted SiO2(43 nm)/Si Studied by a Variable-Energy Positron Beam. Japanese Journal of Applied Physics, 30. 201-206 doi:10.1143/jjap.30.201
Fujii, Satoshi, Shikata, Shinichi, Wei, Long, Tanigawa, Shoichiro (1992) Characterization of vacancy‐type defects in Se‐implanted GaAs by means of a slow positron beam. Journal of Applied Physics, 72 (4). 1405-1409 doi:10.1063/1.351753
Shikata, Shin-ichi, Fujii, Satoshi, Wei, Long, Tanigawa, Shoichiro (1992) Effect of Annealing Method on Vacancy-Type Defects in Si-Implanted GaAs Studied by a Slow Positron Beam. Japanese Journal of Applied Physics, 31. 732-736 doi:10.1143/jjap.31.732
Uedono, A., Chichibu, S. F., Higashiwaki, M., Matsui, T., Ohdaira, T., Suzuki, R. (2005) Vacancy-type defects in Si-doped InN grown by plasma-assisted molecular-beam epitaxy probed using monoenergetic positron beams. Journal of Applied Physics, 97 (4). 43514pp. doi:10.1063/1.1845575
Uedono, A., Suzuki, T., Nakamura, T. (2004) Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam. Journal of Applied Physics, 95 (3). 913-918 doi:10.1063/1.1635648
Lee, Jong‐Lam, Shim, Kyu‐Hwan, Kim, Jin Sup, Park, Hyung Moo, Ma, Dong Sung, Tanigawa, S., Uedono, A. (1989) Depth profiles of vacancy‐type defect in Si+‐implanted GaAs resulting from rapid thermal annealing. Journal of Applied Physics, 65 (1). 396-397 doi:10.1063/1.342559
 
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