Ghandhi, S. K., Ayers, J. E. (1988) Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy. Applied Physics Letters, 53 (13). 1204-1206 doi:10.1063/1.100020
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy | ||
Journal | Applied Physics Letters | ||
Authors | Ghandhi, S. K. | Author | |
Ayers, J. E. | Author | ||
Year | 1988 (September 26) | Volume | 53 |
Issue | 13 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.100020Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8484241 | Long-form Identifier | mindat:1:5:8484241:9 |
GUID | 0 | ||
Full Reference | Ghandhi, S. K., Ayers, J. E. (1988) Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy. Applied Physics Letters, 53 (13). 1204-1206 doi:10.1063/1.100020 | ||
Plain Text | Ghandhi, S. K., Ayers, J. E. (1988) Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy. Applied Physics Letters, 53 (13). 1204-1206 doi:10.1063/1.100020 | ||
In | (1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing |
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