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Gen‐ei, K., Tanioka, A., Suhara, H., Chinen, K. (1988) High coupled power 1.3 μm edge‐emitting light‐emitting diode with a rear window and an integrated absorber. Applied Physics Letters, 53 (13). 1138-1140 doi:10.1063/1.100037

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Reference TypeJournal (article/letter/editorial)
TitleHigh coupled power 1.3 μm edge‐emitting light‐emitting diode with a rear window and an integrated absorber
JournalApplied Physics Letters
AuthorsGen‐ei, K.Author
Tanioka, A.Author
Suhara, H.Author
Chinen, K.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100037Search in ResearchGate
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Mindat Ref. ID8484245Long-form Identifiermindat:1:5:8484245:5
GUID0
Full ReferenceGen‐ei, K., Tanioka, A., Suhara, H., Chinen, K. (1988) High coupled power 1.3 μm edge‐emitting light‐emitting diode with a rear window and an integrated absorber. Applied Physics Letters, 53 (13). 1138-1140 doi:10.1063/1.100037
Plain TextGen‐ei, K., Tanioka, A., Suhara, H., Chinen, K. (1988) High coupled power 1.3 μm edge‐emitting light‐emitting diode with a rear window and an integrated absorber. Applied Physics Letters, 53 (13). 1138-1140 doi:10.1063/1.100037
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

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Canham, L. T., Barraclough, K. G., Robbins, D. J. (1987) 1.3‐μm light‐emitting diode from silicon electron irradiated at its damage threshold. Applied Physics Letters, 51 (19). 1509-1511 doi:10.1063/1.98618
Chin, A. K., Zipfel, C. L., Chin, B. H., DiGiuseppe, M. A. (1983) Degradation of 1.3‐μm InP/InGaAsP light‐emitting diodes with misfit dislocations. Applied Physics Letters, 42 (12). 1031-1033 doi:10.1063/1.93831
Choi, H. K., Eglash, S. J. (1992) High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density. Applied Physics Letters, 61 (10). 1154-1156 doi:10.1063/1.107630
Bulsara, M. T., Yang, V., Thilderkvist, A., Fitzgerald, E. A., Haüsler, K., Eberl, K. (1998) Graded InxGa1−xAs/GaAs 1.3 μm wavelength light emitting diode structures grown with molecular beam epitaxy. Journal of Applied Physics, 83 (1). 592-599 doi:10.1063/1.366646
Hunt, N. E. J., Schubert, E. F., Logan, R. A., Zydzik, G. J. (1992) Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant‐cavity light‐emitting diode. Applied Physics Letters, 61 (19). 2287-2289 doi:10.1063/1.108489
Kwong, Norman S. K., Lau, Kam Y., Bar‐Chaim, Nadav, Ury, Israel, Lee, Kevin J. (1987) High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber. Applied Physics Letters, 51 (23). 1879-1881 doi:10.1063/1.98498
Eglash, S. J., Choi, H. K. (1990) Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm. Applied Physics Letters, 57 (13). 1292-1294 doi:10.1063/1.103462
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Le, H. Q., Turner, G. W., Eglash, S. J., Choi, H. K., Coppeta, D. A. (1994) High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm. Applied Physics Letters, 64 (2). 152-154 doi:10.1063/1.111548
 
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