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Celler, G. K., Trimble, L. E., Sheng, T. T., Kosinski, S. G., West, K. W. (1988) Precipitation of group V elements and Ge in SiO2and their drift in a temperature gradient. Applied Physics Letters, 53 (13). 1178-1180 doi:10.1063/1.100664

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Reference TypeJournal (article/letter/editorial)
TitlePrecipitation of group V elements and Ge in SiO2and their drift in a temperature gradient
JournalApplied Physics Letters
AuthorsCeller, G. K.Author
Trimble, L. E.Author
Sheng, T. T.Author
Kosinski, S. G.Author
West, K. W.Author
Year1988 (September 26)Volume53
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.100664Search in ResearchGate
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Mindat Ref. ID8484267Long-form Identifiermindat:1:5:8484267:7
GUID0
Full ReferenceCeller, G. K., Trimble, L. E., Sheng, T. T., Kosinski, S. G., West, K. W. (1988) Precipitation of group V elements and Ge in SiO2and their drift in a temperature gradient. Applied Physics Letters, 53 (13). 1178-1180 doi:10.1063/1.100664
Plain TextCeller, G. K., Trimble, L. E., Sheng, T. T., Kosinski, S. G., West, K. W. (1988) Precipitation of group V elements and Ge in SiO2and their drift in a temperature gradient. Applied Physics Letters, 53 (13). 1178-1180 doi:10.1063/1.100664
In(1988, September) Applied Physics Letters Vol. 53 (13) AIP Publishing

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Celler, G. K., Trimble, L. E., West, K. W., Pfeiffer, L., Sheng, T. T. (1987) Segregation and drift of arsenic in SiO2under the influence of a temperature gradient. Applied Physics Letters, 50 (11). 664-666 doi:10.1063/1.98114
Celler, G. K., Trimble, L. E. (1988) Release of As from SiO2by a temperature gradient and formation of buriedn+conductive layers in Si‐on‐SiO2structures. Applied Physics Letters, 52 (17). 1425-1427 doi:10.1063/1.99689
Celler, G. K., Trimble, L. E. (1988) High‐temperature stability of Si/SiO2interfaces and the influence of SiO flux on thermomigration of impurities in SiO2. Applied Physics Letters, 53 (25). 2492-2494 doi:10.1063/1.100527
Celler, G. K., Leamy, H. J., Trimble, L. E., Sheng, T. T. (1981) Annular grain structures in pulsed laser recrystallized Si on amorphous insulators. Applied Physics Letters, 39 (5). 425-427 doi:10.1063/1.92760
Celler, G. K., Trimble, L. E. (1989) Catalytic effect of SiO on thermomigration of impurities in SiO2. Applied Physics Letters, 54 (15). 1427-1429 doi:10.1063/1.101407
Celler, G. K., Robinson, McD., Trimble, L. E., Lischner, D. J. (1983) Spatial melt instabilities in radiatively melted crystalline silicon. Applied Physics Letters, 43 (9). 868-870 doi:10.1063/1.94506
Celler, G. K., Trimble, L. E., Frackoviak, J., Jurgensen, C. W., Kola, R. R., Novembre, A. E., Weber, G. R. (1991) Formation of monolithic masks for 0.25 μm x‐ray lithography. Applied Physics Letters, 59 (24). 3105-3107 doi:10.1063/1.105778
Celler, G. K., Trimble, L. E., Ng, K. K., Leamy, H. J., Baumgart, H. (1982) Seeded oscillatory growth of Si over SiO2by cw laser irradiation. Applied Physics Letters, 40 (12). 1043-1045 doi:10.1063/1.92998
Wolfe, R., Hegarty, J., Dillon, J. F., Luther, L. C., Celler, G. K., Trimble, L. E., Dorsey, C. S. (1985) Thin‐film waveguide magneto‐optic isolator. Applied Physics Letters, 46 (9). 817-819 doi:10.1063/1.95894
Williams, J. S., Brown, W. L., Celler, G. K., Leamy, H. J., Poate, J. M., Rozgonyi, G. A., Sheng, T. T. (1981) Characterization of pulsed Nd:YAG laser‐annealed, arsenic‐ion‐implanted silicon. Journal of Applied Physics, 52 (2). 1038-1049 doi:10.1063/1.328801
Leamy, H. J., Rozgonyi, G. A., Sheng, T. T., Celler, G. K. (1978) Periodic regrowth phenomena produced by laser annealing of ion‐implanted silicon. Applied Physics Letters, 32 (9). 535-537 doi:10.1063/1.90119
 
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