Fons, P., Hirashita, N., Markert, L. C., Kim, Y.‐W., Greene, J. E., Ni, W.‐X., Knall, J., Hansson, G. V., Sundgren, J.‐E. (1988) Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy. Applied Physics Letters, 53 (18). 1732-1734 doi:10.1063/1.99809
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy | ||
| Journal | Applied Physics Letters | ||
| Authors | Fons, P. | Author | |
| Hirashita, N. | Author | ||
| Markert, L. C. | Author | ||
| Kim, Y.‐W. | Author | ||
| Greene, J. E. | Author | ||
| Ni, W.‐X. | Author | ||
| Knall, J. | Author | ||
| Hansson, G. V. | Author | ||
| Sundgren, J.‐E. | Author | ||
| Year | 1988 (October 31) | Volume | 53 |
| Issue | 18 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.99809Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8484641 | Long-form Identifier | mindat:1:5:8484641:5 |
| GUID | 0 | ||
| Full Reference | Fons, P., Hirashita, N., Markert, L. C., Kim, Y.‐W., Greene, J. E., Ni, W.‐X., Knall, J., Hansson, G. V., Sundgren, J.‐E. (1988) Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy. Applied Physics Letters, 53 (18). 1732-1734 doi:10.1063/1.99809 | ||
| Plain Text | Fons, P., Hirashita, N., Markert, L. C., Kim, Y.‐W., Greene, J. E., Ni, W.‐X., Knall, J., Hansson, G. V., Sundgren, J.‐E. (1988) Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy. Applied Physics Letters, 53 (18). 1732-1734 doi:10.1063/1.99809 | ||
| In | (1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing | ||
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