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Paz, O., Goldsmith, C. C., Huber, A. (1988) Reversal of x‐ray diffraction dislocation contrast in gallium arsenide. Applied Physics Letters, 53 (19). 1856-1858 doi:10.1063/1.100376

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Reference TypeJournal (article/letter/editorial)
TitleReversal of x‐ray diffraction dislocation contrast in gallium arsenide
JournalApplied Physics Letters
AuthorsPaz, O.Author
Goldsmith, C. C.Author
Huber, A.Author
Year1988 (November 7)Volume53
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.100376Search in ResearchGate
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Mindat Ref. ID8484662Long-form Identifiermindat:1:5:8484662:8
GUID0
Full ReferencePaz, O., Goldsmith, C. C., Huber, A. (1988) Reversal of x‐ray diffraction dislocation contrast in gallium arsenide. Applied Physics Letters, 53 (19). 1856-1858 doi:10.1063/1.100376
Plain TextPaz, O., Goldsmith, C. C., Huber, A. (1988) Reversal of x‐ray diffraction dislocation contrast in gallium arsenide. Applied Physics Letters, 53 (19). 1856-1858 doi:10.1063/1.100376
In(1988, November) Applied Physics Letters Vol. 53 (19) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Saccocio, Edward J. (1967) On X‐Ray Diffraction‐Contrast Reversal in Reflection Topography. Journal of Applied Physics, 38 (9). 3786 doi:10.1063/1.1710212
Rosner, S. J., Amano, Jun, Lee, J. W., Fan, J. C. C. (1988) Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (12). 1101-1103 doi:10.1063/1.100033
Jungbluth, E. D. (1967) Reply to ``On X‐Ray Diffraction‐Contrast Reversal in Reflection Topography''. Journal of Applied Physics, 38 (9). 3786 doi:10.1063/1.1710213
Matyi, R. J., Melloch, M. R., Woodall, J. M. (1992) High resolution x‐ray diffraction analysis of annealed low‐temperature gallium arsenide. Applied Physics Letters, 60 (21). 2642-2644 doi:10.1063/1.106881
Tsai, C. S., Sun, B., Kar-Roy, A. (1997) Guided-wave acousto-optic Bragg diffraction in indium gallium arsenide phosphide waveguides. Applied Physics Letters, 70 (24). 3185-3187 doi:10.1063/1.119153
DeSimone, D., Wood, C. E. C., Evans, C. A. (1982) Manganese incorporation behavior in molecular beam epitaxial gallium arsenide. Journal of Applied Physics, 53 (7). 4938-4942 doi:10.1063/1.331328
Drougard, M. E. (1966) Optical Inhomogeneities in Gallium Arsenide. Journal of Applied Physics, 37 (4). 1858-1866 doi:10.1063/1.1708615
Schubert, E. F., Stark, J. B., Chiu, T. H., Tell, B. (1988) Diffusion of atomic silicon in gallium arsenide. Applied Physics Letters, 53 (4). 293-295 doi:10.1063/1.99917
Bourgoin, J. C., von Bardeleben, H. J., Stiévenard, D. (1988) Native defects in gallium arsenide. Journal of Applied Physics, 64 (9). doi:10.1063/1.341206
Jungbluth, E. D. (1965) DISLOCATION CONTRAST IN ANOMALOUS TRANSMISSION X‐RAY TOPOGRAPHS OF Si. Applied Physics Letters, 7 (11). 302-304 doi:10.1063/1.1754270
Zinke‐Allmang, M., Feldman, L. C., Nakahara, S. (1988) Initial stages of epitaxial growth: Gallium arsenide on silicon. Applied Physics Letters, 52 (2). 144-146 doi:10.1063/1.99032
 
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