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Dobbelaere, W., Huang, D., Ünlü, M. S., Morkoç, H. (1988) AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates. Applied Physics Letters, 53 (2). 94-96 doi:10.1063/1.100359

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Reference TypeJournal (article/letter/editorial)
TitleAlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates
JournalApplied Physics Letters
AuthorsDobbelaere, W.Author
Huang, D.Author
Ünlü, M. S.Author
Morkoç, H.Author
Year1988 (July 11)Volume53
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.100359Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484741Long-form Identifiermindat:1:5:8484741:4
GUID0
Full ReferenceDobbelaere, W., Huang, D., Ünlü, M. S., Morkoç, H. (1988) AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates. Applied Physics Letters, 53 (2). 94-96 doi:10.1063/1.100359
Plain TextDobbelaere, W., Huang, D., Ünlü, M. S., Morkoç, H. (1988) AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates. Applied Physics Letters, 53 (2). 94-96 doi:10.1063/1.100359
In(1988, July) Applied Physics Letters Vol. 53 (2) AIP Publishing

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Salvador, A., Adomi, K., Kishino, K., Ünlü, M. S., Morkoç, H. (1991) GaAs multiple‐quantum‐well reflector modulators with 4:1 contrast ratios on Si. Journal of Applied Physics, 69 (1). 534-536 doi:10.1063/1.347702
Whitehead, M., Stevens, P., Rivers, A., Parry, G., Roberts, J. S., Mistry, P., Pate, M., Hill, G. (1988) Effects of well width on the characteristics of GaAs/AlGaAs multiple quantum well electroabsorption modulators. Applied Physics Letters, 53 (11). 956-958 doi:10.1063/1.100080
Mii, Y. J., Karunasiri, R. P. G., Wang, K. L. (1988) Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates. Applied Physics Letters, 53 (21). 2050-2052 doi:10.1063/1.100316
Chen, J., Won, T., Ünlü, M. S., Morkoç, H., Verret, D. (1988) GaAs‐Si heterojunction bipolar transistor. Applied Physics Letters, 52 (10). 822-824 doi:10.1063/1.99295
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Gao, Guang‐bo, Fan, Zhi‐fang, Blackburn, D. L., Ünlü, M. S., Chen, J., Adomi, K., Morkoç, H. (1991) Uniform junction temperature AlGaAs/GaAs power heterojunction bipolar transistors on silicon substrates. Applied Physics Letters, 58 (10). 1068-1070 doi:10.1063/1.104373
Ketterer, K., Böttcher, E. H., Bimberg, D. (1988) Picosecond spectra of gain‐switched AlGaAs/GaAs multiple quantum well lasers. Applied Physics Letters, 53 (23). 2263-2265 doi:10.1063/1.100248
Treyz, G. V., May, P. G., LaTulipe, D., Basu, S., Wang, W. I. (1990) GaAs multiple quantum well waveguide modulators on silicon substrates. Applied Physics Letters, 57 (11). 1078-1080 doi:10.1063/1.103538
Goossen, K. W., Cunningham, J. E., Jan, W. Y. (1994) Electroabsorption in ultranarrow‐barrier GaAs/AlGaAs multiple quantum well modulators. Applied Physics Letters, 64 (9). 1071-1073 doi:10.1063/1.110935
Hausken, T., Huang, T. C., Lee, K. W., Simes, R. J., Dagli, N., Coldren, L. A. (1988) Impurity‐induced‐disordered phase modulators in AlGaAs/GaAs quantum well and double‐heterostructure waveguides. Applied Physics Letters, 53 (9). 728-730 doi:10.1063/1.99816
 
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