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Richardson, W. B., Mulvaney, B. J. (1988) Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?. Applied Physics Letters, 53 (20). 1917-1919 doi:10.1063/1.100344

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Reference TypeJournal (article/letter/editorial)
TitlePlateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?
JournalApplied Physics Letters
AuthorsRichardson, W. B.Author
Mulvaney, B. J.Author
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100344Search in ResearchGate
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Mindat Ref. ID8484820Long-form Identifiermindat:1:5:8484820:0
GUID0
Full ReferenceRichardson, W. B., Mulvaney, B. J. (1988) Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?. Applied Physics Letters, 53 (20). 1917-1919 doi:10.1063/1.100344
Plain TextRichardson, W. B., Mulvaney, B. J. (1988) Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?. Applied Physics Letters, 53 (20). 1917-1919 doi:10.1063/1.100344
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

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Mulvaney, B. J., Richardson, W. B. (1990) The effect of concentration‐dependent defect recombination reactions on phosphorus diffusion in silicon. Journal of Applied Physics, 67 (6). 3197-3199 doi:10.1063/1.345405
Mulvaney, B. J., Richardson, W. B. (1987) Model for defect‐impurity pair diffusion in silicon. Applied Physics Letters, 51 (18). 1439-1441 doi:10.1063/1.98650
Banerjee, S., Srivastava, A. K., Arora, B. M., Sulhoff, J. W., Zyskind, J. L. (1988) Photoluminescence measurements on open‐tube heat‐treated and Cd‐diffused InP. Applied Physics Letters, 53 (15). 1429-1430 doi:10.1063/1.99963
Richardson, W. B., Mulvaney, B. J. (1989) Nonequilibrium behavior of charged point defects during phosphorus diffusion in silicon. Journal of Applied Physics, 65 (6). 2243-2247 doi:10.1063/1.342836
Johnson, Eric S., Compton, W. Dale, Noonan, J. R., Streetman, B. G. (1973) Recombination luminescence from electron‐irradiated Li‐diffused Si. Journal of Applied Physics, 44 (12). 5411-5418 doi:10.1063/1.1662166
Kitano, T., Matsumoto, Y., Matsui, J. (1988) Local structure around Zn atoms diffused into the GaAs crystal. Applied Physics Letters, 53 (15). 1390-1392 doi:10.1063/1.99986
Norris, C. B. (1972) Carrier Recombination and Trapping in Heteroepitaxial Si/Spinel. Applied Physics Letters, 20 (5). 187-190 doi:10.1063/1.1654102
Koster, L. J. A., Mihailetchi, V. D., Blom, P. W. M. (2006) Bimolecular recombination in polymer/fullerene bulk heterojunction solar cells. Applied Physics Letters, 88 (5). 52104pp. doi:10.1063/1.2170424
Vranch, R. L., Henderson, B., Pepper, M. (1988) Spin‐dependent recombination in irradiated Si/SiO2device structures. Applied Physics Letters, 52 (14). 1161-1163 doi:10.1063/1.99192
van Ommen, A. H., Ottenheim, J. J. M., Theunissen, A. M. L., Mouwen, A. G. (1988) Synthesis of heteroepitaxial Si/CoSi2/Si structures by Co implantation into Si. Applied Physics Letters, 53 (8). 669-671 doi:10.1063/1.100641
de Goey, L. P. H., Driessen, J. P. J., Verhaar, B. J., Walraven, J. T. M. (1984) Surface Three-Body Recombination in Spin-Polarized Atomic Hydrogen. Physical Review Letters, 53 (20). 1919-1922 doi:10.1103/physrevlett.53.1919
 
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