Reference Type | Journal (article/letter/editorial) |
---|
Title | Behavior of Ga on Si(100) as studied by scanning tunneling microscopy |
---|
Journal | Applied Physics Letters |
---|
Authors | Nogami, J. | Author |
---|
Park, Sang‐il | Author |
Quate, C. F. | Author |
Year | 1988 (November 21) | Volume | 53 |
---|
Issue | 21 |
---|
Publisher | AIP Publishing |
---|
DOI | doi:10.1063/1.100289Search in ResearchGate |
---|
| Generate Citation Formats |
Mindat Ref. ID | 8484857 | Long-form Identifier | mindat:1:5:8484857:4 |
---|
|
GUID | 0 |
---|
Full Reference | Nogami, J., Park, Sang‐il, Quate, C. F. (1988) Behavior of Ga on Si(100) as studied by scanning tunneling microscopy. Applied Physics Letters, 53 (21). 2086-2088 doi:10.1063/1.100289 |
---|
Plain Text | Nogami, J., Park, Sang‐il, Quate, C. F. (1988) Behavior of Ga on Si(100) as studied by scanning tunneling microscopy. Applied Physics Letters, 53 (21). 2086-2088 doi:10.1063/1.100289 |
---|
In | (1988, November) Applied Physics Letters Vol. 53 (21) AIP Publishing |
---|
These are possibly similar items as determined by title/reference text matching only.