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Takano, Shinji, Sasaki, Tatsuya, Yamada, Hirohito, Kitamura, Mitsuhiro, Mito, Ikuo (1988) Spectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate‐confinement‐heterostructure quantum well distributed feedback laser diodes. Applied Physics Letters, 53 (21). 2019-2020 doi:10.1063/1.100307

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Reference TypeJournal (article/letter/editorial)
TitleSpectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate‐confinement‐heterostructure quantum well distributed feedback laser diodes
JournalApplied Physics Letters
AuthorsTakano, ShinjiAuthor
Sasaki, TatsuyaAuthor
Yamada, HirohitoAuthor
Kitamura, MitsuhiroAuthor
Mito, IkuoAuthor
Year1988 (November 21)Volume53
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.100307Search in ResearchGate
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Mindat Ref. ID8484870Long-form Identifiermindat:1:5:8484870:5
GUID0
Full ReferenceTakano, Shinji, Sasaki, Tatsuya, Yamada, Hirohito, Kitamura, Mitsuhiro, Mito, Ikuo (1988) Spectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate‐confinement‐heterostructure quantum well distributed feedback laser diodes. Applied Physics Letters, 53 (21). 2019-2020 doi:10.1063/1.100307
Plain TextTakano, Shinji, Sasaki, Tatsuya, Yamada, Hirohito, Kitamura, Mitsuhiro, Mito, Ikuo (1988) Spectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate‐confinement‐heterostructure quantum well distributed feedback laser diodes. Applied Physics Letters, 53 (21). 2019-2020 doi:10.1063/1.100307
In(1988, November) Applied Physics Letters Vol. 53 (21) AIP Publishing

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Kitamura, M., Takano, S., Sasaki, T., Yamada, H., Mito, I. (1988) High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes. Applied Physics Letters, 53 (1). 1-3 doi:10.1063/1.100120
Kasukawa, A., Bhat, R., Zah, C. E., Koza, M. A., Lee, T. P. (1991) Very low threshold current density 1.5 μm GaInAs/AlGaInAs graded‐index separate‐confinement‐heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition. Applied Physics Letters, 59 (20). 2486-2488 doi:10.1063/1.105982
Sasaki, Tatsuya, Kitamura, Mitsuhiro, Mito, Ikuo (1993) Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures. Journal of Crystal Growth, 132 (3). 435-443 doi:10.1016/0022-0248(93)90069-9
Lu, H., Li, G. P., Makino, T. (1993) Spectral linewidth reduction in partly gain‐coupled 1.55 μm strained multiple quantum‐well distributed feedback laser. Applied Physics Letters, 63 (5). 589-591 doi:10.1063/1.109958
Numai, T., Murata, S., Mito, I. (1988) 1.5 μm tunable wavelength filter with wide tuning range and high constant gain using a phase‐controlled distributed feedback laser diode. Applied Physics Letters, 53 (13). 1168-1169 doi:10.1063/1.100011
Hobson, W. S., Wu, M. C., Chen, Y. K., Chin, M. A., Geva, M., Jones, K. S. (1992) Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy. Applied Physics Letters, 60 (5). 598-600 doi:10.1063/1.106565
Sasaki, Tatsuya, Yamaguchi, Masayuki, Kitamura, Mitsuhiro (1994) Monolithically integrated multi-wavelength MQW-DBR laser diodes fabricated by selective metalorganic vapor phase epitaxy. Journal of Crystal Growth, 145 (1). 846-851 doi:10.1016/0022-0248(94)91152-5
Imajo, Y., Kasukawa, A., Namegaya, T., Kikuta, T. (1992) 1.3 μm InAsyP1−y/InP strained‐layer quantum well laser diodes grown by metalorganic chemical vapor deposition. Applied Physics Letters, 61 (21). 2506-2508 doi:10.1063/1.108163
Tanbun‐Ek, T., Logan, R. A., Temkin, H., Berthold, K., Levi, A. F. J., Chu, S. N. G. (1989) Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 55 (22). 2283-2285 doi:10.1063/1.102038
Ko, Hyun-Chul, Nakamura, Takahiro, Koui, Tomoaki, Suzuki, Naofumi, Shiba, Kazuhiro, Kobayashi, Kenichi (2000) All selective metalorganic vapor phase epitaxy grown buried-heterostructure laser diodes with selectively oxidized AlInAs current-confinement layer. Applied Physics Letters, 77 (13). 1934-1936 doi:10.1063/1.1313374
Wang, C. A., Walpole, J. N., Missaggia, L. J., Donnelly, J. P., Choi, H. K. (1991) AlInGaAs/AlGaAs separate‐confinement heterostructure strained single quantum well diode lasers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 58 (20). 2208-2210 doi:10.1063/1.104928
 
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