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Ma, E., Meng, W. J., Johnson, W. L., Nicolet, M‐A., Nathan, M. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides. Applied Physics Letters, 53 (21). 2033-2035 doi:10.1063/1.100494

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Reference TypeJournal (article/letter/editorial)
TitleSimultaneous planar growth of amorphous and crystalline Ni silicides
JournalApplied Physics Letters
AuthorsMa, E.Author
Meng, W. J.Author
Johnson, W. L.Author
Nicolet, M‐A.Author
Nathan, M.Author
Year1988 (November 21)Volume53
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.100494Search in ResearchGate
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Mindat Ref. ID8484920Long-form Identifiermindat:1:5:8484920:9
GUID0
Full ReferenceMa, E., Meng, W. J., Johnson, W. L., Nicolet, M‐A., Nathan, M. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides. Applied Physics Letters, 53 (21). 2033-2035 doi:10.1063/1.100494
Plain TextMa, E., Meng, W. J., Johnson, W. L., Nicolet, M‐A., Nathan, M. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides. Applied Physics Letters, 53 (21). 2033-2035 doi:10.1063/1.100494
In(1988, November) Applied Physics Letters Vol. 53 (21) AIP Publishing

See Also

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Ma, E., Workman, T. W., Johnson, W. L., Nicolet, M‐A. (1989) Ion mixing of metal/Al bilayers near 77 K. Applied Physics Letters, 54 (5). 413-415 doi:10.1063/1.100937
Kolawa, E., Garland, C., Tran, L., Nieh, C. W., Molarius, J. M., Flick, W., Nicolet, M‐A., Wei, J. (1988) Indium oxide diffusion barriers for Al/Si metallizations. Applied Physics Letters, 53 (26). 2644-2646 doi:10.1063/1.100541
Workman, T. W., Cheng, Y. T., Johnson, W. L., Nicolet, M‐A. (1987) Effect of thermodynamics on ion mixing. Applied Physics Letters, 50 (21). 1485-1487 doi:10.1063/1.98253
Clemens, B. M., Nieh, C. W., Kittl, J. A., Johnson, W. L., Josefowicz, J. Y., Hunter, A. T. (1988) Nucleation and growth of YBaCuO on SrTiO3. Applied Physics Letters, 53 (19). 1871-1873 doi:10.1063/1.100484
Meng, W. J., Fultz, B., Ma, E., Johnson, W. L. (1987) Solid‐state interdiffusion reactions in Ni/Ti and Ni/Zr multilayered thin films. Applied Physics Letters, 51 (9). 661-663 doi:10.1063/1.98326
Meng, W. J., Nieh, C. W., Johnson, W. L. (1987) Maximum thickness of amorphous NiZr interlayers formed by a solid‐state reaction technique. Applied Physics Letters, 51 (21). 1693-1695 doi:10.1063/1.98546
Liu, B. X., Clemens, B. M., Gaboriaud, R., Johnson, W. L., Nicolet, M‐A. (1983) Ion mixing to produce amorphous Mo‐Ru superconducting films. Applied Physics Letters, 42 (7). 624-626 doi:10.1063/1.94002
Cheng, Y.‐T., Johnson, W. L., Nicolet, M.‐A. (1985) Dominant moving species in the formation of amorphous NiZr by solid‐state reaction. Applied Physics Letters, 47 (8). 800-802 doi:10.1063/1.95988
Ma, E., Nicolet, M‐A., Nathan, M. (1989) NiAl3formation in Al/Ni thin‐film bilayers with and without contamination. Journal of Applied Physics, 65 (7). 2703-2710 doi:10.1063/1.342756
Liu, Bai‐Xin, Johnson, W. L., Nicolet, M‐A., Lau, S. S. (1983) Structural difference rule for amorphous alloy formation by ion mixing. Applied Physics Letters, 42 (1). 45-47 doi:10.1063/1.93767
Zhu, M. F., Suni, I., Nicolet, M‐A., Sands, T. (1984) Reaction of amorphous Ni‐W and Ni‐N‐W films with substrate silicon. Journal of Applied Physics, 56 (10). 2740-2745 doi:10.1063/1.333804
 
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