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Kwo, J., Hong, M., Trevor, D. J., Fleming, R. M., White, A. E., Farrow, R. C., Kortan, A. R., Short, K. T. (1988) Insituepitaxial growth of Y1Ba2Cu3O7−xfilms by molecular beam epitaxy with an activated oxygen source. Applied Physics Letters, 53 (26). 2683-2685 doi:10.1063/1.100545

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Reference TypeJournal (article/letter/editorial)
TitleInsituepitaxial growth of Y1Ba2Cu3O7−xfilms by molecular beam epitaxy with an activated oxygen source
JournalApplied Physics Letters
AuthorsKwo, J.Author
Hong, M.Author
Trevor, D. J.Author
Fleming, R. M.Author
White, A. E.Author
Farrow, R. C.Author
Kortan, A. R.Author
Short, K. T.Author
Year1988 (December 26)Volume53
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.100545Search in ResearchGate
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Mindat Ref. ID8485309Long-form Identifiermindat:1:5:8485309:9
GUID0
Full ReferenceKwo, J., Hong, M., Trevor, D. J., Fleming, R. M., White, A. E., Farrow, R. C., Kortan, A. R., Short, K. T. (1988) Insituepitaxial growth of Y1Ba2Cu3O7−xfilms by molecular beam epitaxy with an activated oxygen source. Applied Physics Letters, 53 (26). 2683-2685 doi:10.1063/1.100545
Plain TextKwo, J., Hong, M., Trevor, D. J., Fleming, R. M., White, A. E., Farrow, R. C., Kortan, A. R., Short, K. T. (1988) Insituepitaxial growth of Y1Ba2Cu3O7−xfilms by molecular beam epitaxy with an activated oxygen source. Applied Physics Letters, 53 (26). 2683-2685 doi:10.1063/1.100545
In(1988, December) Applied Physics Letters Vol. 53 (26) AIP Publishing

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Kwo, J., Hsieh, T. C., Fleming, R. M., Hong, M., Liou, S. H., Davidson, B. A., Feldman, L. C. (1987) Structural and superconducting properties of orientation-orderedY1Ba2Cu3O7−xfilms prepared by molecular-beam epitaxy. Physical Review B, 36 (7) 4039-4042 doi:10.1103/physrevb.36.4039
Hong, M., Liou, S. H., Bacon, D. D., Grader, G. S., Kwo, J., Kortan, A. R., Davidson, B. A. (1988) Superconducting Tl‐Ba‐Ca‐Cu‐O films by sputtering. Applied Physics Letters, 53 (21). 2102-2104 doi:10.1063/1.100501
Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., Farrow, R. C. (1988) Laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 52 (13). 1065-1067 doi:10.1063/1.99212
Hebard, A. F., Fleming, R. M., Short, K. T., White, A. E., Rice, C. E., Levi, A. F. J., Eick, R. H. (1989) Ion beam thinning and polishing of YBa2Cu3O7films. Applied Physics Letters, 55 (18). 1915-1917 doi:10.1063/1.102331
White, Alice E., Short, K. T., Jacobson, D. C., Poate, J. M., Dynes, R. C., Mankiewich, P. M., Skocpol, W. J., Howard, R. E., Anzlowar, M., Baldwin, K. W., Levi, A. F. J., Kwo, J. R., Hsieh, T., Hong, M. (1988) Ion-beam-induced destruction of superconducting phase coherence inYBa2Cu3O7−δ. Physical Review B, 37 (7) 3755-3758 doi:10.1103/physrevb.37.3755
Spah, R. J., Hess, H. F., Stormer, H. L., White, A. E., Short, K. T. (1988) Parameters forinsitugrowth of highTcsuperconducting thin films using an oxygen plasma source. Applied Physics Letters, 53 (5). 441-443 doi:10.1063/1.100614
Fujita, J., Yoshitake, T., Igarashi, H., Satoh, T. (1990) Insituepitaxial growth of Bi2(Sr,Ca)3Cu2Oxfilms by ion beam sputtering with an atomic oxygen source. Applied Physics Letters, 56 (3). 295-297 doi:10.1063/1.103286
Kwo, J., Hong, M., Kortan, A. R., Queeney, K. T., Chabal, Y. J., Mannaerts, J. P., Boone, T., Krajewski, J. J., Sergent, A. M., Rosamilia, J. M. (2000) High ε gate dielectrics Gd2O3 and Y2O3 for silicon. Applied Physics Letters, 77 (1). 130-132 doi:10.1063/1.126899
Venkatesan, T., Chase, E. W., Wu, X. D., Inam, A., Chang, C. C., Shokoohi, F. K. (1988) Superconducting Y1Ba2Cu3O7−xfilms on Si. Applied Physics Letters, 53 (3). 243-245 doi:10.1063/1.100588
Kwo, J., Gyorgy, E. M., Hong, M., Lowe, W. P., McWhan, D. B., Superfine, R. (1985) Properties of rare‐earth metal superlattice grown by molecular‐beam epitaxy (abstract). Journal of Applied Physics, 57 (8). 3672 doi:10.1063/1.334983
Chand, Naresh, Miller, R. C., Sergent, A. M., Sputz, S. K., Lang, D. V. (1988) Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy. Applied Physics Letters, 52 (20). 1721-1723 doi:10.1063/1.99028
 
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