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Mowbray, D. J., Skolnick, M. S., Lee, D., Claxton, P. A., Roberts, J. S. (1988) Electric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells. Applied Physics Letters, 53 (9). 752-754 doi:10.1063/1.99822

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Reference TypeJournal (article/letter/editorial)
TitleElectric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells
JournalApplied Physics Letters
AuthorsMowbray, D. J.Author
Skolnick, M. S.Author
Lee, D.Author
Claxton, P. A.Author
Roberts, J. S.Author
Year1988 (August 29)Volume53
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99822Search in ResearchGate
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Mindat Ref. ID8485770Long-form Identifiermindat:1:5:8485770:3
GUID0
Full ReferenceMowbray, D. J., Skolnick, M. S., Lee, D., Claxton, P. A., Roberts, J. S. (1988) Electric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells. Applied Physics Letters, 53 (9). 752-754 doi:10.1063/1.99822
Plain TextMowbray, D. J., Skolnick, M. S., Lee, D., Claxton, P. A., Roberts, J. S. (1988) Electric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells. Applied Physics Letters, 53 (9). 752-754 doi:10.1063/1.99822
In(1988, August) Applied Physics Letters Vol. 53 (9) AIP Publishing

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Skolnick, M. S., Nash, K. J., Saker, M. K., Bass, S. J., Claxton, P. A., Roberts, J. S. (1987) Free‐carrier effects on luminescence linewidths in quantum wells. Applied Physics Letters, 50 (26). 1885-1887 doi:10.1063/1.97675
Hashemizadeh, S. A., Wells, J.-P. R., Murzyn, P., Brown, J., Jones, B. D., Wang, T., Parbrook, P. J., Fox, A. M., Mowbray, D. J., Skolnick, M. S. (2005) Picosecond carrier dynamics in AlInGaN multiple quantum wells. Applied Physics Letters, 87 (23). 232106pp. doi:10.1063/1.2137990
Skolnick, M. S., Taylor, L. L., Bass, S. J., Pitt, A. D., Mowbray, D. J., Cullis, A. G., Chew, N. G. (1987) InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Applied Physics Letters, 51 (1). 24-26 doi:10.1063/1.98893
Fry, P. W., Finley, J. J., Wilson, L. R., Lemaître, A., Mowbray, D. J., Skolnick, M. S., Hopkinson, M., Hill, G., Clark, J. C. (2000) Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots. Applied Physics Letters, 77 (26). 4344-4346 doi:10.1063/1.1334363
Shorthose, M. G., Maciel, A. C., Ryan, J. F., Scott, M. D., Moseley, A., Davies, J. I., Riffat, J. R. (1987) Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wells. Applied Physics Letters, 51 (7). 493-495 doi:10.1063/1.98377
Fan, W. H., Olaizola, S. M., Wells, J.-P. R., Fox, A. M., Wang, T., Parbrook, P. J., Mowbray, D. J., Skolnick, M. S. (2004) Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells. Applied Physics Letters, 84 (16). 3052-3054 doi:10.1063/1.1707226
Brown, J., Wells, J.-P. R., Kundys, D. O., Fox, A. M., Wang, T., Parbrook, P. J., Mowbray, D. J., Skolnick, M. S. (2008) Excitonic spin lifetimes in InGaN quantum wells and epilayers. Journal of Applied Physics, 104 (5). 53523pp. doi:10.1063/1.2976344
Marsh, J. H., Roberts, J. S., Claxton, P. A. (1985) Photoluminescence from In0.53Ga0.47As/InP quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 46 (12). 1161-1163 doi:10.1063/1.95744
Fan, W. H., Olaizola, S. M., Wells, J.-P. R., Fox, A. M., Wang, T., Parbrook, P. J., Mowbray, D. J., Skolnick, M. S. (2007) Erratum: “Femtosecond studies of electron capture times in InGaN∕GaN multiple quantum wells” [Appl. Phys. Lett. 84, 3052 (2004)]. Applied Physics Letters, 91 (9). 99901pp. doi:10.1063/1.2778361
Olaizola, S. M., Fan, W. H., Hashemizadeh, S. A., Wells, J.-P. R., Mowbray, D. J., Skolnick, M. S., Fox, A. M., Parbrook, P. J. (2006) Time-resolved photoluminescence studies of carrier diffusion in GaN. Applied Physics Letters, 89 (7). 72107pp. doi:10.1063/1.2335957
Jang, Y. D., Park, J., Lee, D., Mowbray, D. J., Skolnick, M. S., Liu, H. Y., Hopkinson, M., Hogg, R. A. (2009) Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots. Applied Physics Letters, 95 (17). 171902pp. doi:10.1063/1.3255017
 
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