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Han, Jeong W., Hwang, S., Lansari, Y., Harper, R. L., Yang, Z., Giles, N. C., Cook, J. W., Schetzina, J. F., Sen, S. (1989) p‐type modulation‐doped HgCdTe. Applied Physics Letters, 54 (1). 63-65 doi:10.1063/1.100836

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Reference TypeJournal (article/letter/editorial)
Titlep‐type modulation‐doped HgCdTe
JournalApplied Physics Letters
AuthorsHan, Jeong W.Author
Hwang, S.Author
Lansari, Y.Author
Harper, R. L.Author
Yang, Z.Author
Giles, N. C.Author
Cook, J. W.Author
Schetzina, J. F.Author
Sen, S.Author
Year1989 (January 2)Volume54
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100836Search in ResearchGate
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Mindat Ref. ID8485836Long-form Identifiermindat:1:5:8485836:8
GUID0
Full ReferenceHan, Jeong W., Hwang, S., Lansari, Y., Harper, R. L., Yang, Z., Giles, N. C., Cook, J. W., Schetzina, J. F., Sen, S. (1989) p‐type modulation‐doped HgCdTe. Applied Physics Letters, 54 (1). 63-65 doi:10.1063/1.100836
Plain TextHan, Jeong W., Hwang, S., Lansari, Y., Harper, R. L., Yang, Z., Giles, N. C., Cook, J. W., Schetzina, J. F., Sen, S. (1989) p‐type modulation‐doped HgCdTe. Applied Physics Letters, 54 (1). 63-65 doi:10.1063/1.100836
In(1989, January) Applied Physics Letters Vol. 54 (1) AIP Publishing

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Schulman, J. N., Wu, O. K., Patten, E. A., Han, Jeong W., Lansari, Y., Kim, L. S., Cook, J. W., Schetzina, J. F. (1988) Light hole interband transitions in HgTe‐HgCdTe superlattices. Applied Physics Letters, 53 (24). 2420-2422 doi:10.1063/1.100227
Schetzina, J.F., Han, J.W., Lansari, Y., Giles, N.C., Yang, Z., Hwang, S., Cook, J.W., Otsuka, N. (1990) Modulation-doped HgCdTe quantum well structures and superlattices grown by photoassisted molecular beam epitaxy. Journal of Crystal Growth, 101 (1). 23-32 doi:10.1016/0022-0248(90)90931-a
Harper, R. L., Hwang, S., Giles, N. C., Schetzina, J. F., Dreifus, D. L., Myers, T. H. (1989) Arsenic‐doped CdTe epilayers grown by photoassisted molecular beam epitaxy. Applied Physics Letters, 54 (2). 170-172 doi:10.1063/1.101219
Yang, Z., Bowers, K. A., Ren, J., Lansari, Y., Cook, J. W., Schetzina, J. F. (1992) Electrical properties ofp‐type ZnSe:N thin films. Applied Physics Letters, 61 (22). 2671-2673 doi:10.1063/1.108104
Hoffman, C. A., Meyer, J. R., Bartoli, F. J., Lansari, Y., Cook, J. W., Schetzina, J. F. (1992) Setback modulation doping of HgTe‐CdTe multiple quantum wells. Applied Physics Letters, 60 (18). 2282-2284 doi:10.1063/1.107055
Harris, K. A., Hwang, S., Lansari, Y., Cook, J. W., Schetzina, J. F. (1986) Growth and properties of dilute magnetic semiconductor superlattices containing Hg1−xMnxTe. Applied Physics Letters, 49 (12). 713-715 doi:10.1063/1.97576
Giles, N. C., Han, Jeong W., Cook, J. W., Schetzina, J. F. (1989) Stimulated emission at 2.8 μm from Hg‐based quantum well structures grown by photoassisted molecular beam epitaxy. Applied Physics Letters, 55 (19). 2026-2028 doi:10.1063/1.102152
Yang, Z., Yu, Z., Lansari, Y., Hwang, S., Cook, J. W., Schetzina, J. F. (1994) Optical properties of HgTe/CdTe superlattices in the normal, semimetallic, and inverted-band regimes. Physical Review B, 49 (12) 8096-8108 doi:10.1103/physrevb.49.8096
Becla, P., Kaiser, D., Giles, N. C., Lansari, Y., Schetzina, J. F. (1987) Electrical and optical properties of P‐ and As‐doped Cd1−xMnxTe. Journal of Applied Physics, 62 (4). 1352-1362 doi:10.1063/1.339638
Lansari, Y., Ren, J., Sneed, B., Bowers, K. A., Cook, J. W., Schetzina, J. F. (1992) Improved ohmic contacts forp‐type ZnSe and relatedp‐on‐ndiode structures. Applied Physics Letters, 61 (21). 2554-2556 doi:10.1063/1.108124
Harper, R. L., Bicknell, R. N., Blanks, D. K., Giles, N. C., Schetzina, J. F., Lee, Y. R., Ramdas, A. K. (1989) Excited confined quantum states in CdMnTe‐CdTe superlattices. Journal of Applied Physics, 65 (2). 624-628 doi:10.1063/1.343094
 
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