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Keavney, C. J., Vernon, S. M., Haven, V. E., Wojtczuk, S. J., Al‐Jassim, M. M. (1989) Fabrication ofn+/pInP solar cells on silicon substrates. Applied Physics Letters, 54 (12). 1139-1141 doi:10.1063/1.100741

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Reference TypeJournal (article/letter/editorial)
TitleFabrication ofn+/pInP solar cells on silicon substrates
JournalApplied Physics Letters
AuthorsKeavney, C. J.Author
Vernon, S. M.Author
Haven, V. E.Author
Wojtczuk, S. J.Author
Al‐Jassim, M. M.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100741Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486009Long-form Identifiermindat:1:5:8486009:9
GUID0
Full ReferenceKeavney, C. J., Vernon, S. M., Haven, V. E., Wojtczuk, S. J., Al‐Jassim, M. M. (1989) Fabrication ofn+/pInP solar cells on silicon substrates. Applied Physics Letters, 54 (12). 1139-1141 doi:10.1063/1.100741
Plain TextKeavney, C. J., Vernon, S. M., Haven, V. E., Wojtczuk, S. J., Al‐Jassim, M. M. (1989) Fabrication ofn+/pInP solar cells on silicon substrates. Applied Physics Letters, 54 (12). 1139-1141 doi:10.1063/1.100741
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Spitzer, M. B., Keavney, C. J., Vernon, S. M., Haven, V. E. (1987) Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (5). 364-366 doi:10.1063/1.98442
Ahrenkiel, R. K., Al‐Jassim, M. M., Dunlavy, D. J., Jones, K. M., Vernon, S. M., Tobin, S. P., Haven, V. E. (1988) Minority‐carrier properties of GaAs on silicon. Applied Physics Letters, 53 (3). 222-224 doi:10.1063/1.100137
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Walters, Robert J., Messenger, S. R., Summers, G. P., Romero, M. J., Al-Jassim, M. M., Araújo, D., Garcia, R. (2001) Radiation response ofn-type base InP solar cells. Journal of Applied Physics, 90 (7). 3558-3565 doi:10.1063/1.1398592
Vernon, S. M., Pearton, S. J., Gibson, J. M., Short, K. T., Haven, V. E. (1987) Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si. Applied Physics Letters, 50 (17). 1161-1163 doi:10.1063/1.97949
Romero, Manuel J., Jiang, C.-S., Abushama, J., Moutinho, H. R., Al-Jassim, M. M., Noufi, R. (2006) Electroluminescence mapping of CuGaSe2 solar cells by atomic force microscopy. Applied Physics Letters, 89 (14). 143120pp. doi:10.1063/1.2360230
Vernon, S. M., Anderson, W. A. (1975) Temperature effects in Schottky‐barrier silicon solar cells. Applied Physics Letters, 26 (12). 707-709 doi:10.1063/1.88044
Pearton, S. J., Vernon, S. M., Abernathy, C. R., Short, K. T., Caruso, R., Stavola, M., Gibson, J. M., Haven, V. E., White, A. E., Jacobson, D. C. (1987) Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition. Journal of Applied Physics, 62 (3). 862-867 doi:10.1063/1.339690
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Pearton, S. J., Wu, C. S., Stavola, Michael, Ren, F., Lopata, J., Dautremont‐Smith, W. C., Vernon, S. M., Haven, V. E. (1987) Hydrogenation of GaAs on Si: Effects on diode reverse leakage current. Applied Physics Letters, 51 (7). 496-498 doi:10.1063/1.98378
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