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Vu, T. Q., Norris, J. A., Tsai, C. S. (1989) Planar waveguide lenses in GaAs by using ion milling. Applied Physics Letters, 54 (12). 1098-1100 doi:10.1063/1.100769

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Reference TypeJournal (article/letter/editorial)
TitlePlanar waveguide lenses in GaAs by using ion milling
JournalApplied Physics Letters
AuthorsVu, T. Q.Author
Norris, J. A.Author
Tsai, C. S.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100769Search in ResearchGate
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Mindat Ref. ID8486037Long-form Identifiermindat:1:5:8486037:2
GUID0
Full ReferenceVu, T. Q., Norris, J. A., Tsai, C. S. (1989) Planar waveguide lenses in GaAs by using ion milling. Applied Physics Letters, 54 (12). 1098-1100 doi:10.1063/1.100769
Plain TextVu, T. Q., Norris, J. A., Tsai, C. S. (1989) Planar waveguide lenses in GaAs by using ion milling. Applied Physics Letters, 54 (12). 1098-1100 doi:10.1063/1.100769
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Vu, T. Q., Tsai, C. S., Young, D., Wang, C. L. (1989) Ion‐milled lenses and lens arrays in yttrium iron garnet‐gadolinium gallium garnet waveguides. Applied Physics Letters, 55 (22). 2271-2273 doi:10.1063/1.102035
Vu, T. Q., Tsai, C. S., Kao, Y. C. (1992) Integration of a curved hybrid waveguide lens and photodetector array in a GaAs waveguide. Applied Optics, 31. 5246pp. doi:10.1364/ao.31.005246
Tsai, C. S., Young, D. (1989) Wideband scanning of a guided‐light beam and spectrum analysis using magnetostatic waves in an yttrium iron garnet‐gadolinium gallium garnet waveguide. Applied Physics Letters, 54 (3). 196-198 doi:10.1063/1.101006
Li, Q., Tsai, C. S., Sottini, S., Lee, C. C. (1985) Light propagation and acousto‐optic interaction in a LiNbO3spherical waveguide. Applied Physics Letters, 46 (8). 707-709 doi:10.1063/1.95482
Johnson, M. B., McGill, T. C., Paulter, N. G. (1989) Carrier lifetimes in ion‐damaged GaAs. Applied Physics Letters, 54 (24). 2424-2426 doi:10.1063/1.101096
Haynes, T. E., Zuhr, R. A., Pennycook, S. J., Appleton, B. R. (1989) Heteroepitaxy of GaAs on Si and Ge using alternating, low‐energy ion beams. Applied Physics Letters, 54 (15). 1439-1441 doi:10.1063/1.100690
Dautremont‐Smith, W. C., Nabity, J. C., Swaminathan, V., Stavola, Michael, Chevallier, J., Tu, C. W., Pearton, S. J. (1986) Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure. Applied Physics Letters, 49 (17). 1098-1100 doi:10.1063/1.97433
Biegelsen, D. K., Ponce, F. A., Tramontana, J. C. (1989) Simple ion milling preparation of 〈111〉 tungsten tips. Applied Physics Letters, 54 (13). 1223-1225 doi:10.1063/1.100722
Caracci, S. J., Krames, M. R., Holonyak, N., Herzinger, C. M., Crook, A. C., DeTemple, T. A., Besse, P.‐A. (1993) Native‐oxide‐defined low‐loss AlGaAs‐GaAs planar waveguide bends. Applied Physics Letters, 63 (16). 2265-2267 doi:10.1063/1.110548
Islam, M. N., Hillman, R. L., Miller, D. A. B., Chemla, D. S., Gossard, A. C., English, J. H. (1987) Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides. Applied Physics Letters, 50 (16). 1098-1100 doi:10.1063/1.97930
Lidow, A., Gibbons, J. F., Magee, T. (1977) A double‐layered encapsulant for annealing ion‐implanted GaAs up to 1100 °C. Applied Physics Letters, 31 (3). 158-161 doi:10.1063/1.89623
 
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