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Salemink, H. W. M., Meier, H. P., Ellialtioglu, R., Gerritsen, J. W., Muralt, P. R. M. (1989) Tunnel spectroscopy of the AlGaAs‐GaAs heterostructure interface. Applied Physics Letters, 54 (12). 1112-1114 doi:10.1063/1.100773

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Reference TypeJournal (article/letter/editorial)
TitleTunnel spectroscopy of the AlGaAs‐GaAs heterostructure interface
JournalApplied Physics Letters
AuthorsSalemink, H. W. M.Author
Meier, H. P.Author
Ellialtioglu, R.Author
Gerritsen, J. W.Author
Muralt, P. R. M.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100773Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486045Long-form Identifiermindat:1:5:8486045:1
GUID0
Full ReferenceSalemink, H. W. M., Meier, H. P., Ellialtioglu, R., Gerritsen, J. W., Muralt, P. R. M. (1989) Tunnel spectroscopy of the AlGaAs‐GaAs heterostructure interface. Applied Physics Letters, 54 (12). 1112-1114 doi:10.1063/1.100773
Plain TextSalemink, H. W. M., Meier, H. P., Ellialtioglu, R., Gerritsen, J. W., Muralt, P. R. M. (1989) Tunnel spectroscopy of the AlGaAs‐GaAs heterostructure interface. Applied Physics Letters, 54 (12). 1112-1114 doi:10.1063/1.100773
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Albrektsen, O., Arent, D. J., Meier, H. P., Salemink, H. W. M. (1990) Tunneling microscopy and spectroscopy of molecular beam epitaxy grown GaAs‐AlGaAs interfaces. Applied Physics Letters, 57 (1). 31-33 doi:10.1063/1.103563
Muralt, P., Meier, H., Pohl, D. W., Salemink, H. W. M. (1987) Scanning tunneling microscopy and potentiometry on a semiconductor heterojunction. Applied Physics Letters, 50 (19). 1352-1354 doi:10.1063/1.97853
Johnson, M. B., Maier, U., Meier, H.‐P., Salemink, H. W. M. (1993) Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy. Applied Physics Letters, 63 (9). 1273-1275 doi:10.1063/1.109755
Meier, H. P., Van Gieson, E., Walter, W., Harder, C., Krahl, M., Bimberg, D. (1989) Molecular beam epitaxy of GaAs/AlGaAs quantum wells on channeled substrates. Applied Physics Letters, 54 (5). 433-435 doi:10.1063/1.100943
Salemink, H. W. M., Biesterbos, J. W. M. (1983) Optical stability of narrow stripe, proton‐isolated AlGaAs double heterostructure lasers with gain guiding. Applied Physics Letters, 43 (5). 434-436 doi:10.1063/1.94379
Fang, H., Zeller, R., Stiles, P. J. (1989) Fabrication of quasi‐zero‐dimensional submicron dot array and capacitance spectroscopy in a GaAs/AlGaAs heterostructure. Applied Physics Letters, 55 (14). 1433-1435 doi:10.1063/1.101578
Albrektsen, O., Meier, H. P., Arent, D. J., Salemink, H. W. M. (1993) Terracing and step bunching in interfaces of molecular beam epitaxy‐grown (Al)GaAs multilayers. Applied Physics Letters, 62 (17). 2105-2107 doi:10.1063/1.109466
Johnson, M. B., Meier, H. P., Salemink, H. W. M. (1993) Dopant and carrier profiling in modulation‐doped GaAs multilayers with cross‐sectional scanning tunneling microscopy. Applied Physics Letters, 63 (26). 3636-3638 doi:10.1063/1.110073
van de Steeg, M. J. H., Jongbloets, H. W. H. M., Gerritsen, J. W., Wyder, P. (1983) Far‐infrared photothermal ionization spectroscopy of semiconductors in the presence of intrinsic light. Journal of Applied Physics, 54 (6). 3464-3474 doi:10.1063/1.332410
Hendriks, P., Staring, A. A. M., van Welzenis, R. G., Wolter, J. H., Prost, W., Heime, K., Schlapp, W., Weimann, G. (1989) Current oscillations at high electrical fields in the two‐dimensional electron gas in GaAs/AlGaAs heterostructures. Applied Physics Letters, 54 (26). 2668-2670 doi:10.1063/1.101030
Moser, J., Zenger, M., Gerl, C., Schuh, D., Meier, R., Chen, P., Bayreuther, G., Wegscheider, W., Weiss, D., Lai, C.-H., Huang, R.-T., Kosuth, M., Ebert, H. (2006) Bias dependent inversion of tunneling magnetoresistance in Fe∕GaAs∕Fe tunnel junctions. Applied Physics Letters, 89 (16). 162106pp. doi:10.1063/1.2364163
 
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