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Ohno, H., Ishii, H., Matsuzaki, K., Hasegawa, H. (1989) Self‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy. Applied Physics Letters, 54 (12). 1124-1126 doi:10.1063/1.100776

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Reference TypeJournal (article/letter/editorial)
TitleSelf‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy
JournalApplied Physics Letters
AuthorsOhno, H.Author
Ishii, H.Author
Matsuzaki, K.Author
Hasegawa, H.Author
Year1989 (March 20)Volume54
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.100776Search in ResearchGate
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Mindat Ref. ID8486051Long-form Identifiermindat:1:5:8486051:2
GUID0
Full ReferenceOhno, H., Ishii, H., Matsuzaki, K., Hasegawa, H. (1989) Self‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy. Applied Physics Letters, 54 (12). 1124-1126 doi:10.1063/1.100776
Plain TextOhno, H., Ishii, H., Matsuzaki, K., Hasegawa, H. (1989) Self‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy. Applied Physics Letters, 54 (12). 1124-1126 doi:10.1063/1.100776
In(1989, March) Applied Physics Letters Vol. 54 (12) AIP Publishing

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Ishii, H., Ohno, H., Matsuzaki, K., Hasegawa, H. (1989) Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopy. Journal of Crystal Growth, 95 (1). 132-135 doi:10.1016/0022-0248(89)90365-5
Ohnoc, H., Ishii, H., Matsuzaki, K., Hasegawa, H. (1989) Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by x-ray photoelectron spectroscopy. Journal of Crystal Growth, 95 (1). 367-370 doi:10.1016/0022-0248(89)90420-x
Ohno, H., Ohtsuka, S., Ishii, H., Matsubara, Y., Hasegawa, H. (1989) Atomic layer epitaxy of GaAs using triethylgallium and arsine. Applied Physics Letters, 54 (20). 2000-2002 doi:10.1063/1.101195
Ohno, H., Luo, J. K., Matsuzaki, K., Hasegawa, H. (1989) Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphicN‐AlGaAs/GaInAs/GaAs structures. Applied Physics Letters, 54 (1). 36-38 doi:10.1063/1.100826
Lu, Z. H., Sacher, E., Selmani, A., Yelon, A. (1989) Supersaturated substitutional Ga+ion implanted in silicon studied by x‐ray photoelectron spectroscopy. Applied Physics Letters, 54 (26). 2665-2667 doi:10.1063/1.101029
Ishii, H., Hasegawa, H., Ishii, A., Ohno, H. (1990) X-ray photo-electron spectroscopy analysis of InP insulator-semiconductor structures prepared by anodic oxidation. Applied Surface Science, 41. 390-394 doi:10.1016/0169-4332(89)90089-5
Lu, Z. H., Azelmad, A., Trudeau, Y., Yelon, A. (1989) Damage profile of ion‐implanted GaAs by x‐ray photoelectron spectroscopy. Applied Physics Letters, 55 (9). 846-848 doi:10.1063/1.101774
Luo, J. K., Ohno, H., Matsuzaki, K., Hasegawa, H. (1989) Quantum Hall effect of two‐dimensional electron gas in AlyGa1−yAs/Ga1−xInxAs/GaAs pseudomorphic structures. Journal of Applied Physics, 66 (9). 4549-4551 doi:10.1063/1.344473
Ohno, H., Akiba, N., Matsukura, F., Shen, A., Ohtani, K., Ohno, Y. (1998) Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy. Applied Physics Letters, 73 (3). 363-365 doi:10.1063/1.121835
Dumont, H., Rutzinger, D., Vincent, C., Dazord, J., Monteil, Y., Alexandre, F., Gentner, J. L. (2003) Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy. Applied Physics Letters, 82 (12). 1830-1832 doi:10.1063/1.1561164
Chae, Y. K., Ohno, H., Eguchi, K., Yoshida, T. (2001) Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition. Journal of Applied Physics, 89 (12). 8311-8315 doi:10.1063/1.1370365
 
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