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Williams, L. M., Lu, P.‐Y., Chu, S. N. G. (1989) Plasma‐enhanced chemical vapor deposited HgTe‐CdTe epitaxial superlattices. Applied Physics Letters, 54 (14). 1329-1331 doi:10.1063/1.100706

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Reference TypeJournal (article/letter/editorial)
TitlePlasma‐enhanced chemical vapor deposited HgTe‐CdTe epitaxial superlattices
JournalApplied Physics Letters
AuthorsWilliams, L. M.Author
Lu, P.‐Y.Author
Chu, S. N. G.Author
Year1989 (April 3)Volume54
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100706Search in ResearchGate
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Mindat Ref. ID8486163Long-form Identifiermindat:1:5:8486163:6
GUID0
Full ReferenceWilliams, L. M., Lu, P.‐Y., Chu, S. N. G. (1989) Plasma‐enhanced chemical vapor deposited HgTe‐CdTe epitaxial superlattices. Applied Physics Letters, 54 (14). 1329-1331 doi:10.1063/1.100706
Plain TextWilliams, L. M., Lu, P.‐Y., Chu, S. N. G. (1989) Plasma‐enhanced chemical vapor deposited HgTe‐CdTe epitaxial superlattices. Applied Physics Letters, 54 (14). 1329-1331 doi:10.1063/1.100706
In(1989, April) Applied Physics Letters Vol. 54 (14) AIP Publishing

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Williams, L. M., Lu, P.‐Y., Wang, C.‐H., Parsey, J. M., Chu, S. N. G. (1987) Plasma enhanced chemical vapor deposition of epitaxial mercury telluride. Applied Physics Letters, 51 (21). 1738-1740 doi:10.1063/1.98508
Williams, L. M., Lu, P.‐Y., Chu, S. N. G., Wang, C.‐H. (1987) Multilayers of HgTe‐CdTe grown by low‐temperature metalorganic chemical vapor deposition. Journal of Applied Physics, 62 (1). 295-297 doi:10.1063/1.339144
Lu, P.‐Y., Williams, L. M., Chu, S. N. G., Ross, M. H. (1989) Device quality Hg1−xCdxTe material by low‐temperature precracking metalorganic chemical vapor deposition. Applied Physics Letters, 54 (20). 2021-2022 doi:10.1063/1.101179
Lu, P.‐Y., Wang, C.‐H., Williams, L. M., Chu, S. N. G., Stiles, C. M. (1986) Epitaxial Hg1−xCdxTe growth by low‐temperature metalorganic chemical vapor deposition. Applied Physics Letters, 49 (20). 1372-1374 doi:10.1063/1.97328
Leopold, D. J., Wroge, M. L., Broerman, J. G. (1987) Optical properties of HgTe‐CdTe superlattices. Applied Physics Letters, 50 (14). 924-926 doi:10.1063/1.97981
Kanicki, J., Hug, S. (1989) Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride. Applied Physics Letters, 54 (8). 733-735 doi:10.1063/1.100876
Wang, C.‐H., Lu, P.‐Y., Williams, L. M. (1986) Epitaxial growth of HgTe by precracking metalorganic mercury and tellurium compounds. Applied Physics Letters, 48 (16). 1085-1086 doi:10.1063/1.96605
Wu, G. Y., McGill, T. C. (1985) Strain effects in HgTe‐CdTe superlattices grown on CdTe substrates. Applied Physics Letters, 47 (6). 634-636 doi:10.1063/1.96041
Liang, S., Chern, C. S., Shi, Z. Q., Lu, P., Safari, A., Lu, Y., Kear, B. H., Hou, S. Y. (1994) Epitaxial growth of SrTiO3/YBa2Cu3O7−xheterostructures by plasma‐enhanced metalorganic chemical vapor deposition. Applied Physics Letters, 64 (26). 3563-3565 doi:10.1063/1.111198
Peterman, D. J., Wroge, M. L., Morris, B. J., Leopold, D. J., Broerman, J. G. (1989) Controlledp‐type impurity doping of HgTe‐CdTe superlattices during molecular‐beam‐epitaxial growth. Journal of Applied Physics, 65 (4). 1550-1553 doi:10.1063/1.342971
Wu, G. Y., Mailhiot, C., McGill, T. C. (1985) Optical properties of HgTe‐CdTe superlattices. Applied Physics Letters, 46 (1). 72-74 doi:10.1063/1.95858
 
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