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Sun, C. C., Xu, J. M. (1989) Stepped‐gate‐oxide structure—A new approach for speed enhancement in the gate‐controlled photodetector. Applied Physics Letters, 54 (14). 1335-1337 doi:10.1063/1.100708

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Reference TypeJournal (article/letter/editorial)
TitleStepped‐gate‐oxide structure—A new approach for speed enhancement in the gate‐controlled photodetector
JournalApplied Physics Letters
AuthorsSun, C. C.Author
Xu, J. M.Author
Year1989 (April 3)Volume54
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.100708Search in ResearchGate
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Mindat Ref. ID8486167Long-form Identifiermindat:1:5:8486167:2
GUID0
Full ReferenceSun, C. C., Xu, J. M. (1989) Stepped‐gate‐oxide structure—A new approach for speed enhancement in the gate‐controlled photodetector. Applied Physics Letters, 54 (14). 1335-1337 doi:10.1063/1.100708
Plain TextSun, C. C., Xu, J. M. (1989) Stepped‐gate‐oxide structure—A new approach for speed enhancement in the gate‐controlled photodetector. Applied Physics Letters, 54 (14). 1335-1337 doi:10.1063/1.100708
In(1989, April) Applied Physics Letters Vol. 54 (14) AIP Publishing

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Ciccarelli, C., Park, B. G., Ogawa, S., Ferguson, A. J., Wunderlich, J. (2010) Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor. Applied Physics Letters, 97 (8). 82106pp. doi:10.1063/1.3475771
El Kazzi, M., Czornomaz, L., Rossel, C., Gerl, C., Caimi, D., Siegwart, H., Fompeyrine, J., Marchiori, C. (2012) Thermally stable, sub-nanometer equivalent oxide thickness gate stack for gate-first In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 100 (6). 63505pp. doi:10.1063/1.3683472
Hirayama, Y., Saku, T. (1989) Conductance characteristics of ballistic one‐dimensional channels controlled by a gate electrode. Applied Physics Letters, 54 (25). 2556-2558 doi:10.1063/1.101049
Sun, C. C., Xu, J. M., Hagley, A., Surridge, R., SpringThorpe, A. (1990) Observation of electron velocity overshoot in AlxGa1−xAs/GaAs heterostructure insulated‐gate field‐effect transistors. Applied Physics Letters, 57 (6). 566-568 doi:10.1063/1.103622
Wixforth, A., Sundaram, M., Ensslin, K., English, J. H., Gossard, A. C. (1990) Gate‐controlled subband structure and dimensionality of the electron system in a wide parabolic quantum well. Applied Physics Letters, 56 (5). 454-456 doi:10.1063/1.102763
Kumar, Arvind, Laux, Steven E., Stern, Frank (1989) Channel sensitivity to gate roughness in a split‐gate GaAs‐AlGaAs heterostructure. Applied Physics Letters, 54 (13). 1270-1271 doi:10.1063/1.100736
Perálvarez, M., Carreras, Josep, Barreto, J., Morales, A., Domínguez, C., Garrido, B. (2008) Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks. Applied Physics Letters, 92 (24). 241104pp. doi:10.1063/1.2939562
Chung, Steve S., Chang, C. M. (2008) The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach. Applied Physics Letters, 93 (21). 213502pp. doi:10.1063/1.3036681
Tse, K., Robertson, J. (2006) Defect passivation in HfO2 gate oxide by fluorine. Applied Physics Letters, 89 (14). 142914pp. doi:10.1063/1.2360190
Lee, J., Wong, C.‐C. D., Tung, C. Y., Smith, W. Lee, Hahn, S., Arst, M. (1987) Gate oxide integrity and minority‐carrier lifetime correlated with Si wafer polish damage. Applied Physics Letters, 51 (1). 54-56 doi:10.1063/1.98885
Shur, Michael (1989) Split‐gate field‐effect transistor. Applied Physics Letters, 54 (2). 162-164 doi:10.1063/1.101216
 
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