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Alt, H. Ch. (1989) Photosensitivity of the 714 and 730 cm−1absorption bands in semi‐insulating GaAs: Evidence for a deep donor involving oxygen. Applied Physics Letters, 54 (15). 1445-1447 doi:10.1063/1.100692

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Reference TypeJournal (article/letter/editorial)
TitlePhotosensitivity of the 714 and 730 cm−1absorption bands in semi‐insulating GaAs: Evidence for a deep donor involving oxygen
JournalApplied Physics Letters
AuthorsAlt, H. Ch.Author
Year1989 (April 10)Volume54
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.100692Search in ResearchGate
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Mindat Ref. ID8486240Long-form Identifiermindat:1:5:8486240:4
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Full ReferenceAlt, H. Ch. (1989) Photosensitivity of the 714 and 730 cm−1absorption bands in semi‐insulating GaAs: Evidence for a deep donor involving oxygen. Applied Physics Letters, 54 (15). 1445-1447 doi:10.1063/1.100692
Plain TextAlt, H. Ch. (1989) Photosensitivity of the 714 and 730 cm−1absorption bands in semi‐insulating GaAs: Evidence for a deep donor involving oxygen. Applied Physics Letters, 54 (15). 1445-1447 doi:10.1063/1.100692
In(1989, April) Applied Physics Letters Vol. 54 (15) AIP Publishing

See Also

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Alt, H. Ch. (1989) Fine structure of the oxygen‐related local mode at 714 cm−1in GaAs. Applied Physics Letters, 55 (26). 2736-2738 doi:10.1063/1.102269
Alt, H. Ch., Neef, M., von Philipsborn, H. (1989) Contrast phenomena of band‐band and deep level photoluminescence topographs in annealed semi‐insulating GaAs. Applied Physics Letters, 55 (19). 1972-1974 doi:10.1063/1.102136
Alt, H. Ch., Schink, H. (1988) Microscopic spatial fluctuations of the EL2 defect in semi‐insulating GaAs: Influence on bulk resistivity and correlation with implant activation. Applied Physics Letters, 52 (20). 1661-1663 doi:10.1063/1.99050
Usami, Akira, Kitagawa, Akio, Wada, Takao (1989) Redistribution of deep levels in semi‐insulating GaAs wafer by rapid thermal processing. Applied Physics Letters, 54 (9). 831-833 doi:10.1063/1.100860
Alt, H. Ch., Packeiser, G. (1986) High‐resolution imaging of the EL2 distribution in thin semi‐insulating GaAs wafers: A comparison with x‐ray topography. Journal of Applied Physics, 60 (8). 2954-2958 doi:10.1063/1.337768
Müllenborn, M., Alt, H. Ch., Heberle, A. (1991) Annealing behavior of deep‐level defects in semi‐insulating gallium arsenide studied by photoluminescence, infrared absorption, and resistivity mapping. Journal of Applied Physics, 69 (8). 4310-4317 doi:10.1063/1.348405
Linde, M., Spaeth, J.‐M., Alt, H. Ch. (1995) The paramagnetic charge state of substitutional oxygen in GaAs. Applied Physics Letters, 67 (5). 662-664 doi:10.1063/1.115195
Ko, K. Y., Lagowski, J., Gatos, H. C. (1989) Gettering of donor impurities by V in GaAs and the growth of semi‐insulating crystals. Journal of Applied Physics, 66 (7). 3309-3316 doi:10.1063/1.344126
Alt, H. Ch., Gomeniuk, Y., Kretzer, U. (2003) Far-infrared spectroscopy of shallow acceptors in semi-insulating GaAs: evidence for defect interactions with EL2. physica status solidi (b), 235 (1). 58-62 doi:10.1002/pssb.200301533
Kaminska, M., Parsey, J. M., Lagowski, J., Gatos, H. C. (1982) Current oscillations in semi‐insulating GaAs associated with field‐enhanced capture of electrons by the major deep donor EL2. Applied Physics Letters, 41 (10). 989-991 doi:10.1063/1.93366
Ennen, H., Kaufmann, U., Schneider, J. (1981) Donor‐acceptor pairs in GaP and GaAs involving the deep nickel acceptor. Applied Physics Letters, 38 (5). 355-357 doi:10.1063/1.92375
 
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