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Pan, D. S., Lu, Y., Chu, M. (1989) Response to ‘‘Comment on ‘Constant‐current‐density model for the anomalous Hall effects in Hg0.8Cd0.2Te’ ’’ [Appl. Phys. Lett.54, 1480 (1989)]. Applied Physics Letters, 54 (15). 1480-1481 doi:10.1063/1.101330

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Reference TypeJournal (article/letter/editorial)
TitleResponse to ‘‘Comment on ‘Constant‐current‐density model for the anomalous Hall effects in Hg0.8Cd0.2Te’ ’’ [Appl. Phys. Lett.54, 1480 (1989)]
JournalApplied Physics Letters
AuthorsPan, D. S.Author
Lu, Y.Author
Chu, M.Author
Year1989 (April 10)Volume54
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.101330Search in ResearchGate
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Mindat Ref. ID8486252Long-form Identifiermindat:1:5:8486252:9
GUID0
Full ReferencePan, D. S., Lu, Y., Chu, M. (1989) Response to ‘‘Comment on ‘Constant‐current‐density model for the anomalous Hall effects in Hg0.8Cd0.2Te’ ’’ [Appl. Phys. Lett.54, 1480 (1989)]. Applied Physics Letters, 54 (15). 1480-1481 doi:10.1063/1.101330
Plain TextPan, D. S., Lu, Y., Chu, M. (1989) Response to ‘‘Comment on ‘Constant‐current‐density model for the anomalous Hall effects in Hg0.8Cd0.2Te’ ’’ [Appl. Phys. Lett.54, 1480 (1989)]. Applied Physics Letters, 54 (15). 1480-1481 doi:10.1063/1.101330
In(1989, April) Applied Physics Letters Vol. 54 (15) AIP Publishing

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Chen, M. C., Parker, S. G., Weirauch, D. F. (1989) Comment on ‘‘Constant‐current‐density model for the anomalous Hall effects in Hg0.8Cd0.2Te’’ [Appl. Phys. Lett.53, 307 (1988)]. Applied Physics Letters, 54 (15). 1480 doi:10.1063/1.101329
Pan, D. S., Lu, Y., Chu, M. (1988) Constant‐current‐density model for the anomalous Hall effects in Hg0.8Cd0.2Te. Applied Physics Letters, 53 (4). 307-309 doi:10.1063/1.100595
d’Heurle, F. M. (1989) Comment on ‘‘Diffusion of Si in thin CoSi2layers’’ [Appl. Phys. Lett.54, 1314 (1989)]. Applied Physics Letters, 55 (17). 1804 doi:10.1063/1.102324
Nolte, David (1989) Addendum: Band offsets for pseudomorphic InP/GaAs [Appl. Phys. Lett.54, 259 (1989)]. Applied Physics Letters, 54 (22). 2277 doi:10.1063/1.101102
Jackson, W. B., Tsai, C. C., Stutzmann, M. (1989) Response to ‘‘Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’ ’’ [Appl. Phys. Lett.54, 398 (1989)]. Applied Physics Letters, 54 (4). 399-400 doi:10.1063/1.100975
Marella, Paul F., Pease, R. Fabian (1989) Comment on ‘‘Writing nanometer‐scale symbols in gold using the scanning tunneling microscope’’[Appl. Phys. Lett. 54, 1424 (1989)]. Applied Physics Letters, 55 (22). 2366 doi:10.1063/1.102020
Levine, B. F. (1990) Comment on ‘‘Performance limitations of GaAs/AlGaAs infrared superlattices’’ [Appl. Phys. Lett.54, 2704 (1989)]. Applied Physics Letters, 56 (23). 2354-2355 doi:10.1063/1.102915
Li, Y. Z., Andres, R. P., Reifenberger, R. (1989) Response to ‘‘Comment on ‘Writing nanometer‐scale symbols in gold using the scanning tunneling microscope’ ’’[Appl. Phys. Lett. 55, 2366 (1989)]. Applied Physics Letters, 55 (22). 2366-2367 doi:10.1063/1.102021
Turton, R. J., Jaros, M. (1989) Erratum: Intersubband optical transitions in Si‐Si0.5Ge0.5 superlattices [Appl. Phys. Lett. 54, 1986 (1989)]. Applied Physics Letters, 55 (8). 807 doi:10.1063/1.102378
Woodhead, J. (1989) Comment on ‘‘Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy’’ [Appl. Phys. Lett.54, 48 (1989)]. Applied Physics Letters, 55 (20). 2147 doi:10.1063/1.102085
Schowengerdt, F. D., Lin, T. L., Fathauer, R. W., Grunthaner, P. J. (1989) Response to ‘‘Comment on ‘Diffusion of Si in thin CoSi2layers’ ’’ [Appl. Phys. Lett.55, 1804 (1989)]. Applied Physics Letters, 55 (17). 1804-1805 doi:10.1063/1.102325
 
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