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Yin, Y., Cooper, J. A., Neudeck, P. G., Balzan, M. L., Geissberger, A. E. (1989) Negative transconductance in a resistive gate metal‐semiconductor field‐effect transistor. Applied Physics Letters, 54 (19). 1884-1886 doi:10.1063/1.101230

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Reference TypeJournal (article/letter/editorial)
TitleNegative transconductance in a resistive gate metal‐semiconductor field‐effect transistor
JournalApplied Physics Letters
AuthorsYin, Y.Author
Cooper, J. A.Author
Neudeck, P. G.Author
Balzan, M. L.Author
Geissberger, A. E.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101230Search in ResearchGate
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Mindat Ref. ID8486502Long-form Identifiermindat:1:5:8486502:1
GUID0
Full ReferenceYin, Y., Cooper, J. A., Neudeck, P. G., Balzan, M. L., Geissberger, A. E. (1989) Negative transconductance in a resistive gate metal‐semiconductor field‐effect transistor. Applied Physics Letters, 54 (19). 1884-1886 doi:10.1063/1.101230
Plain TextYin, Y., Cooper, J. A., Neudeck, P. G., Balzan, M. L., Geissberger, A. E. (1989) Negative transconductance in a resistive gate metal‐semiconductor field‐effect transistor. Applied Physics Letters, 54 (19). 1884-1886 doi:10.1063/1.101230
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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Ismail, K., Chu, W., Yen, A., Antoniadis, D. A., Smith, Henry I. (1989) Negative transconductance and negative differential resistance in a grid‐gate modulation‐doped field‐effect transistor. Applied Physics Letters, 54 (5). 460-462 doi:10.1063/1.100952
Raulin, J. Y., Thorngren, E., di Forte‐Poisson, M. A., Razeghi, M., Colomer, G. (1987) Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate. Applied Physics Letters, 50 (9). 535-536 doi:10.1063/1.98151
Vinter, B., Tardella, A. (1987) Tunneling transfer field‐effect transistor: A negative transconductance device. Applied Physics Letters, 50 (7). 410-412 doi:10.1063/1.98186
Ciccarelli, C., Park, B. G., Ogawa, S., Ferguson, A. J., Wunderlich, J. (2010) Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor. Applied Physics Letters, 97 (8). 82106pp. doi:10.1063/1.3475771
Kuang, J. B., Tasker, P. J., Chen, Y. K., Wang, G. W., Eastman, L. F., Aina, O. A., Hier, H., Fathimulla, A. (1989) Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1136-1138 doi:10.1063/1.100740
Shur, Michael (1989) Split‐gate field‐effect transistor. Applied Physics Letters, 54 (2). 162-164 doi:10.1063/1.101216
Capasso, Federico, Sen, Susanta, Cho, Alfred Y. (1987) Negative transconductance resonant tunneling field‐effect transistor. Applied Physics Letters, 51 (7). 526-528 doi:10.1063/1.98387
Oh, C. S., Youn, C. J., Yang, G. M., Lim, K. Y., Yang, J. W. (2004) AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor with oxidized Ni as a gate insulator. Applied Physics Letters, 85 (18). 4214-4216 doi:10.1063/1.1811793
Beltram, Fabio, Capasso, Federico, Hutchinson, Albert L., Malik, Roger J. (1989) Injection in a continuum miniband: Observation of negative transconductance in a superlattice‐base transistor. Applied Physics Letters, 55 (15). 1534-1536 doi:10.1063/1.102237
Ciccarelli, C., Park, B. G., Ogawa, S., Ferguson, A. J., Wunderlich, J. (2010) Erratum: “Gate controlled magnetoresistance in a silicon metal-oxide-semiconductor field-effect-transistor” [Appl. Phys. Lett. 97, 082106 (2010)]. Applied Physics Letters, 97 (15). 159902pp. doi:10.1063/1.3501973
Kastalsky, A., Milshtein, M., Shantharama, L. G., Harbison, J., Florez, L. (1989) New negative differential resistance effects in the negative resistance field‐effect transistor. Journal of Applied Physics, 66 (5). 2186-2188 doi:10.1063/1.344316
 
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